2N7002LT1 数据手册

●最大源漏极电压Vds Drain-Source Voltage | 60V \---|--- 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V 最大漏极电流Id Drain Current | 115mA/0.115A 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 7.5Ω/Ohm @500mA,10V 开启电压Vgs（th） Gate-Source Threshold Voltage | 1-2.5V 耗散功率Pd Power Dissipation | 300mW/0.3W Description & Applications | Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23 Features 60 V, 115 mA, N−Channel SOT−23 Pb−Free Packages are Available 描述与应用 | Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23 特性 60 V，115 mA，N沟道SOT-23 无铅封装