●集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO)| 50V
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●集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO)| 45V
●集电极连续输出电流ICCollector Current(IC)| 100mA/0.1A
●截止频率fTTranstion Frequency(fT)| 100MHz
●直流电流增益hFEDC Current Gain(hFE)| 420~800
●管压降VCE(sat)Collector-Emitter Saturation Voltage| 200~600 mV
●耗散功率PcPower Dissipation| 250mW/0.25W
●Description & Applications| NPN general purpose transistor FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification.
●描述与应用| NPN通用晶体管 特点 •低电流(最大100 mA) •低电压(最大65 V)。 应用 •通用开关和放大。