Datasheet 搜索 > MOS管 > Fairchild（飞兆/仙童） > FDS6375 数据手册 > FDS6375 其他数据使用手册 4/7 页
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FDS6375 其他数据使用手册 - Fairchild（飞兆/仙童）
制造商:
Fairchild（飞兆/仙童）
分类:
MOS管
封装:
SOIC-8
描述:
FAIRCHILD SEMICONDUCTOR FDS6375 晶体管, MOSFET, P沟道, 8 A, -20 V, 24 mohm, -4.5 V, -700 mV
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FDS6375数据手册
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FDS6375 Rev E(W)
Typical Characteristics
0
10
20
30
40
50
0 0.5 1 1.5 2 2.5 3 3.5
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
V
GS
= -4.5V
-2.5V
-2.0V
-1.5V
-3.0V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
0 10 20 30 40 50
-I
D
, DRAIN CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= - 2.0V
-4.5V
-3.0V
-3.5V
-2.5V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50 -25 0 25 50 75 100 125 150 175
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= -8A
V
GS
= - 4.5V
0.005
0.015
0.025
0.035
0.045
0.055
1 2 3 4 5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS(ON)
, ON-RESISTANCE (OHM)
I
D
= -4A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
10
20
30
40
50
0.5 1 1.5 2 2.5 3
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
T
A
= -55
o
C 25
o
C
125
o
C
V
DS
= -5V
0.0001
0.001
0.01
0.1
1
10
0 0.2 0.4 0.6 0.8 1
-V
SD
,
BODY DIODE FORWARD VOLTAGE (V)
-I
S
, REVERSE DRAIN CURRENT (A)
V
GS
= 0V
T
A
= 125
o
C
25
o
C
-55
o
C
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6375
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