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FDS6375 其他数据使用手册 - Fairchild（飞兆/仙童）
制造商:
Fairchild（飞兆/仙童）
分类:
MOS管
封装:
SOIC-8
描述:
FAIRCHILD SEMICONDUCTOR FDS6375 晶体管, MOSFET, P沟道, 8 A, -20 V, 24 mohm, -4.5 V, -700 mV
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FDS6375数据手册
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FDS6375 Rev E(W)
Typical Characteristics
0
1
2
3
4
5
0 6 12 18 24 30
Q
g
, GATE CHARGE (nC)
-V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= -8A
V
DS
= -5V
-10V
-15V
0
800
1600
2400
3200
4000
0 5 10 15 20
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
C
ISS
C
OSS
C
RSS
f = 1 MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1 1 10 100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
DC
10s
1s
100ms
100
µ
R
DS(ON)
LIMIT
V
GS
= -4.5V
SINGLE PULSE
R
θJA
= 125
o
C/W
T
A
= 25
o
C
10ms
1ms
0
10
20
30
40
50
0.001 0.01 0.1 1 10 100 1000
t
1
, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
R
θ
JA
= 125°C/W
T
A
= 25°C
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
R
θ
JA(t) = r(t) + R
θ
JA
R
θ
JA = 125
o
C/W
TJ - TA = P * R
θ
JA(t)
Duty Cycle, D = t1 / t2
P(pk)
t1
t2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6375
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