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MCT5211SR2VM 其他数据使用手册 - Fairchild（飞兆/仙童）
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MCT5211SR2VM数据手册
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©1983 Fairchild Semiconductor Corporation www.fairchildsemi.com
MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3 3
MCT5201M, MCT5210M, MCT5211M — Low Input Current Phototransistor Optocouplers
Electrical Characteristics
(T
A
= 25°C unless otherwise specified)
Individual Component Characteristics
Isolation Characteristics
*All typical T
A
= 25°C
Symbol Parameters Test Conditions Device Min. Typ.* Max. Units
EMITTER
V
F
Input Forward Voltage I
F
= 5mA All 1.25 1.5 V
∆
V
F
∆
T
A
Forward Voltage Temp. Coefficient I
F
= 2mA All -1.75 mV/°C
V
R
Reverse Voltage I
R
= 10µA All 6 V
C
J
Junction Capacitance V
F
= 0V, f = 1.0MHz All 18 pF
DETECTOR
BV
CEO
Collector-Emitter Breakdown Voltage I
C
= 1.0mA, I
F
= 0 All 30 100 V
BV
CBO
Collector-Base Breakdown Voltage I
C
= 10µA, I
F
= 0 All 30 120 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
= 10µA, I
F
= 0 All 5 10 V
I
CER
Collector-Emitter Dark Current V
CE
= 10V, I
F
= 0,
R
BE
= 1M
Ω
All 1 100 nA
C
CE
Capacitance, Collector to Emitter V
CE
= 0, f = 1MHz All 10 pF
C
CB
Capacitance, Collector to Base V
CB
= 0, f = 1MHz All 80 pF
C
EB
Capacitance, Emitter to Base V
EB
= 0, f = 1MHz All 15 pF
Symbol Characteristic Test Conditions Device Min. Typ.* Max. Units
V
ISO
Input-Output Isolation
Voltage
(10)
f = 60Hz, t = 1 sec. All 7500 Vac(peak)
R
ISO
Isolation Resistance
(10)
V
I-O
= 500 VDC, T
A
= 25°C All 10
11
Ω
C
ISO
Isolation Capacitance
(9)
V
I-O
= 0, f = 1 MHz All 0.4 0.6 pF
CM
H
Common Mode Transient V
CM
= 50 V
P-P1
, R
L
= 750
Ω
,
I
F
= 0
MCT5210M/11M 5000 V/µs
Rejection – Output HIGH V
CM
= 50 V
P-P
, R
L
= 1K
Ω
,
I
F
= 0
MCT5201M
CM
L
Common Mode Transient V
CM
= 50 V
P-P1
, R
L
= 750
Ω
,
I
F
=1.6mA
MCT5210M/11M 5000 V/µs
Rejection – Output LOW V
CM
= 50 V
P-P1
, R
L
= 1K
Ω
,
I
F
= 5mA
MCT5201M
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