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CDCEL949PERF-EVM
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CDCEL949PERF-EVM数据手册
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5
CDCE949
,
CDCEL949
www.ti.com
SCAS844F AUGUST 2007REVISED OCTOBER 2016
Product Folder Links: CDCE949 CDCEL949
Submit Documentation FeedbackCopyright © 2007–2016, Texas Instruments Incorporated
Pin Functions (continued)
PIN
TYPE
(1)
DESCRIPTION
NAME NO.
SDA/S1 23 I/O
SDA: Bidirectional serial data input/output (default configuration), LVCMOS; internal
pullup 500 kΩ; or
S1: User-programmable control input; LVCMOS inputs; internal pullup 500 kΩ
S0 2 I User-programmable control input S0; LVCMOS inputs; internal pullup 500 kΩ
V
Ctrl
4 I VCXO control voltage (leave open or pull up when not used)
V
DD
3, 13 P 1.8-V power supply for the device
V
DDOUT
6, 10, 17 P
CDCEL949: 1.8-V supply for all outputs
CDCE949: 3.3-V or 2.5-V supply for all outputs
Xin/CLK 1 I Crystal oscillator input or LVCMOS clock input (selectable through SDA/SCL bus)
Xout 24 O Crystal oscillator output (leave open or pull up when not used)
Y1 21
O LVCMOS output
Y2 19
Y3 18
Y4 7
Y5 8
Y6 16
Y7 15
Y8 11
Y9 12
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability.
(2) The input and output negative voltage ratings may be exceeded if the input and output clamp–current ratings are observed.
(3) SDA and SCL can go up to 3.6 V as stated in the Recommended Operating Conditions table.
7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN MAX UNIT
V
DD
Supply voltage –0.5 2.5 V
V
I
Input voltage
(2) (3)
–0.5 V
DD
+ 0.5 V
V
O
Output voltage
(2)
–0.5 V
DDOUT
+ 0.5 V
I
I
Input current (V
I
< 0, V
I
> V
DD
) 20 mA
I
O
Continuous output current 50 mA
T
J
Junction temperature 125 °C
T
stg
Storage temperature –65 150 °C
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.2 ESD Ratings
VALUE UNIT
V
(ESD)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001
(1)
±2000
V
Charged-device model (CDM), per JEDEC specification JESD22-C101
(2)
±1500

CDCEL949PERF-EVM 数据手册

TI(德州仪器)
26 页 / 1.31 MByte
TI(德州仪器)
41 页 / 1.5 MByte
TI(德州仪器)
6 页 / 0.27 MByte

CDCEL949 数据手册

TI(德州仪器)
可编程4 -PLL VCXO时钟合成器与1.8V , 2.5V和3.3V LVCMOS输出 Programmable 4-PLL VCXO Clock Synthesizer with 1.8V, 2.5V and 3.3V LVCMOS Outputs
TI(德州仪器)
可编程4 -PLL VCXO时钟合成器与1.8V , 2.5V和3.3V LVCMOS输出 Programmable 4-PLL VCXO Clock Synthesizer with 1.8V, 2.5V and 3.3V LVCMOS Outputs
TI(德州仪器)
可编程4 -PLL VCXO时钟合成器与1.8V , 2.5V和3.3V LVCMOS输出 Programmable 4-PLL VCXO Clock Synthesizer with 1.8V, 2.5V and 3.3V LVCMOS Outputs
TI(德州仪器)
TEXAS INSTRUMENTS  CDCEL949PERF-EVM  评估模块, 时钟发生器, CDCEL949
TI(德州仪器)
可编程4 -PLL VCXO时钟合成器与1.8V , 2.5V和3.3V LVCMOS输出 Programmable 4-PLL VCXO Clock Synthesizer with 1.8V, 2.5V and 3.3V LVCMOS Outputs
TI(德州仪器)
可编程4 -PLL VCXO时钟合成器与1.8V , 2.5V和3.3V LVCMOS输出 Programmable 4-PLL VCXO Clock Synthesizer with 1.8V, 2.5V and 3.3V LVCMOS Outputs
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