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2N6667 开发手册 - TI（德州仪器）
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2N6667数据手册
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© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 8
1 Publication Order Number:
2N6667/D
2N6667, 2N6668
Darlington Silicon
Power Transistors
Designed for general−purpose amplifier and low speed switching
applications.
• High DC Current Gain −
h
FE
= 3500 (Typ) @ I
C
= 4.0 Adc
• Collector−Emitter Sustaining Voltage − @ 200 mAdc
V
CEO(sus)
= 60 Vdc (Min) − 2N6667
= 80 Vdc (Min) − 2N6668
• Low Collector−Emitter Saturation Voltage −
V
CE(sat)
= 2.0 Vdc (Max)@ I
C
= 5.0 Adc
• Monolithic Construction with Built−In Base−Emitter Shunt Resistors
• TO−220AB Compact Package
• Complementary to 2N6387, 2N6388
• These Devices are Pb−Free and are RoHS Compliant*
Figure 1. Darlington Schematic
BASE
EMITTER
COLLECTOR
≈ 8 k ≈ 120
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
ORDERING INFORMATION
MARKING DIAGRAM
PNP SILICON
DARLINGTON
POWER TRANSISTORS
10 A, 60−80 V, 65 W
x = 7 or 8
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
2N6667G TO−220
(Pb−Free)
50 Units/Rail
2N6668G TO−220
(Pb−Free)
50 Units/Rail
www.onsemi.com
TO−220
CASE 221A
STYLE 1
1
2
3
4
2N666x
AYWWG
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