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BC847CDXV6T5 开发手册 - ON Semiconductor(安森美)
制造商:
ON Semiconductor(安森美)
分类:
双极性晶体管
封装:
SOT-563
描述:
双路通用晶体管 Dual General Purpose Transistors
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BC847CDXV6T5数据手册
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© Semiconductor Components Industries, LLC, 2010
October, 2010 − Rev. 2
1 Publication Order Number:
BC847CDXV6T1/D
BC847CDXV6T1,
BC847CDXV6T5
BC848CDXV6T1,
BC848CDXV6T5
Dual General Purpose
Transistors
NPN Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−563 which is designed for
low power surface mount applications.
Features
• These are Pb−Free Devices
MAXIMUM RATINGS
Rating Symbol BC847 BC848 Unit
Collector − Emitter Voltage V
CEO
45 30 V
Collector − Base Voltage V
CBO
50 30 V
Emitter − Base Voltage V
EBO
6.0 5.0 V
Collector Current − Continuous I
C
100 100 mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol Max Unit
Total Device Dissipation, (Note 1)
T
A
= 25°C
Derate above 25°C
P
D
357
2.9
mW
mW/°C
Thermal Resistance,
Junction-to-Ambient (Note 1)
R
q
JA
350 °C/W
Characteristic
(Both Junctions Heated)
Symbol Max Unit
Total Device Dissipation, (Note 1)
T
A
= 25°C
Derate above 25°C
P
D
500
4.0
mW
mW/°C
Thermal Resistance,
Junction-to-Ambient (Note 1)
R
q
JA
250 °C/W
Junction and Storage
Temperature Range
T
J
, T
stg
−55 to +150 °C
1. FR−4 @ Minimum Pad
SOT−563
CASE 463A
PLASTIC
1
6
Q
1
(1)(2)
(3)
(4) (5) (6)
Q
2
http://onsemi.com
MARKING DIAGRAMS
1x M G
G
BC847CDXV6T1
1x = Device Code
x = G or M
M = Date Code
G =Pb−Free Package
(Note: Microdot may be in either location)
1
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
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