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2SAR542PT100 数据手册 - ROHM Semiconductor（罗姆半导体）
制造商:
ROHM Semiconductor（罗姆半导体）
分类:
双极性晶体管
封装:
MPT-3
描述:
PNP 功率晶体管，Rohm### 双极晶体管，ROHM Semiconductor
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2SAR542PT100数据手册
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Data Sheet
2SAR542P
lElectrical characteristics(Ta = 25°C)
*1 Pulsed
*2 See switching time test circuit
lSwitching time test circuit
Unit
Collector-emitter
breakdown voltage
BV
CEO
I
C
= -1mA
-30
-
-
V
Parameter
Symbol
Conditions
Min.
Typ.
Max.
V
Emitter-base
breakdown voltage
BV
EBO
I
E
= -100mA
-6
-
-
V
Collector-base
breakdown voltage
BV
CBO
I
C
= -100mA
-30
-
-
mA
Emitter cut-off current
I
EBO
V
EB
= -4V
-
-
-1
mA
Collector cut-off current
I
CBO
V
CB
= -30V
-
-
-1
-
V
DC current gain
h
FE
V
CE
= -2V, I
C
= -500mA
200
-
500
-
Collector-emitter
saturation voltage
V
CE(sat)
*1
I
C
= -2A, I
B
= -100mA
-
-0.20
-0.40
t
f
*2
-
25
MHz
Output capacitance
C
ob
V
CB
= -10V, I
E
= 0A,
f = 1MHz
-
40
-
pF
Transition frequency
f
T
V
CE
= -10V, I
E
= 100mA
f=100MH
Z
-
240
-
ns
ns
Storage time
t
stg
*2
-
200
-
ns
Turn-on time
t
on
*2
I
C
= -2.5A
I
B1
= -250mA
I
B2
=250mA
V
CC
⋍ -10V
-
45
-
Fall time
2/6
2014.02 - Rev.C
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