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BSS308PEH6327XT 数据手册 - Infineon（英飞凌）
制造商:
Infineon（英飞凌）
封装:
SOT-23-3
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BSS308PEH6327XT数据手册
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BSS308PE
OptiMOS™ P3 Small-Signal-Transistor
Features
• P-channel
• Enhancement mode
• Logic level (4.5V rated)
• ESD protected
• Qualified according to AEC Q101
• 100% lead-free; RoHS compliant
• Halogen-free according to IEC61249-2-21
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
I
D
T
A
=25 °C
-2.0 A
T
A
=70 °C
-1.6
Pulsed drain current
I
D,pulse
T
A
=25 °C
-8.0
Avalanche energy, single pulse
E
AS
I
D
=-2 A, R
GS
=25 Ω
-10.7 mJ
Reverse diode dv/dt dv/dt
I
D
=-2 A,
V
DS
=-16V,
di/dt=-200A/µs,
T
j,max
=150 °C
6 kV/µs
Gate source voltage
V
GS
±20 V
Power dissipation
1)
P
tot
T
A
=25 °C
W
Operating and storage temperature
T
j
, T
stg
-55 ... 150 °C
ESD Class JESD22-A114 -HBM 2 (2kV to 4kV)
Soldering Temperature 260 °C °C
IEC climatic category; DIN IEC 68-1 55/150/56 °C
Value
0.5
PG-SOT-23
3
1
Type Package Tape and Reel Information Marking Lead Free Packing
BSS308PE PG-SOT23 H6327: 3000 pcs/ reel YFs Yes Non dry
2
V
DS
30 V
R
DS(on),max
V
GS
=-10 V 80
mΩ
V
GS
=-4.5 V 130
I
D
-2.0 A
Product Summary
Rev 2.03 page 1 2011-07-08
Downloaded from Elcodis.com electronic components distributor
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