Datasheet 搜索 > 光耦合器/光隔离器 > Fairchild（飞兆/仙童） > H11G2M 数据手册 > H11G2M 数据手册 1/14 页
器件3D模型￥ 1.768
H11G2M 数据手册 - Fairchild（飞兆/仙童）
制造商:
Fairchild（飞兆/仙童）
分类:
光耦合器/光隔离器
封装:
DIP-6
描述:
FAIRCHILD SEMICONDUCTOR H11G2M 光电耦合器, 光敏达林顿, 7.5KV, DIP
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
H11G2M数据手册
Page:
of 14 Go
若手册格式错乱，请下载阅览PDF原文件
H11AG1M — 6-Pin DIP Phototransistor Optocoupler
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11AG1M Rev. 1.4
April 2015
H11AG1M
6-Pin DIP Phototransistor Optocoupler
Features
■
High-Efficiency Low-Degradation Liquid Epitaxial
IRED
■
Logic Level Compatible, Input and Output Currents,
with CMOS and LS/TTL
■
High DC Current Transfer Ratio at Low Input Currents
(as low as 200 µA)
■
Safety and Regulatory Approvals:
– UL1577, 4,170 VAC
RMS
for 1 Minute
– DIN-EN/IEC60747-5-5, 850 V Peak Working
Insulation Voltage
Applications
■
CMOS Driven Solid State Reliability
■
Telephone Ring Detector
■
Digital Logic Isolation
Description
The H11AG1M device consists of a Gallium-Aluminum-
Arsenide IRED emitting diode coupled with a silicon
phototransistor in a dual in-line package. This device
provides the unique feature of high current transfer ratio
at both low output voltage and low input current. This
makes it ideal for use in low-power logic circuits, tele-
communications equipment and portable electronics
isolation applications.
Schematic Package Outlines
6
1
6
6
1
1
Figure 2. Package Outlines
Figure 1. Schematic
1
2
6
5 COLLECTOR
4 EMITTER
BASE
ANODE
CATHODE
N/C
3
器件 Datasheet 文档搜索
AiEMA 数据库涵盖高达 72,405,303 个元件的数据手册，每天更新 5,000 多个 PDF 文件
