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IRFP9140 数据手册 - Intersil（英特矽尔）
制造商:
Intersil（英特矽尔）
描述:
19A ， 100V ， 0.200欧姆，P沟道功率MOSFET 19A, 100V, 0.200 Ohm, P-Channel Power MOSFET
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IRFP9140数据手册
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of 7 Go
若手册格式错乱，请下载阅览PDF原文件
4-57
File Number
2292.4
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
IRFP9140
19A, 100V, 0.200 Ohm, P-Channel Power
MOSFET
This is an advanced power MOSFET designed, tested, and
guaranteed to withstand a specified level of energy in the
breakdown avalanche mode of operation. It is a P-Channel
enhancement mode silicon gate power field effect transistor
designed for applications such as switching regulators,
switching convertors,motordrivers,relay drivers,and drivers
for high power bipolar switching transistors requiring high
speed and low gate drive power. These types can be
operated directly from integrated circuits.
Formerly developmental type TA17521.
Features
• 19A, 100V
•r
DS(ON)
= 0.200Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
Symbol
Packaging
JEDEC STYLE T0-247
Ordering Information
PART NUMBER PACKAGE BRAND
IRFP9140 TO-247 IRFP9140
NOTE: When ordering, use the entire part number.
G
D
S
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
Data Sheet July 1999
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