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JS28F00AP33BF0 数据手册 - Numonyx
制造商:
Numonyx
封装:
TSOP-56
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3D模型
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JS28F00AP33BF0数据手册
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Datasheet Apr 2010
1 Order Number: 208043-05
Numonyx
®
Axcell™ P33-65nm Flash Memory
512-Mbit , 1-Gbit , 2-Gbit
Datasheet
Product Features
High performance:
Easy BGA:
— 95ns initial access time(512-Mbit, 1-Gbit)
— 100ns initial access time(2-Gbit)
— 25ns 16-word asynchronous-page read mode
— 52MHz with zero WAIT states, 17ns clock-to-
data output synchronous-burst read mode
— 4-, 8-, 16-, and continuous-word options for
burst mode
TSOP:
— 105ns initial access time(512-Mbit, 1-Gbit)
Easy BGA and TSOP:
— Buffered Enhanced Factory Programming at
2.0MByte/s (typ) using 512-word buffer
— 3.0V buffered programming at 1.46MByte/s
(Typ) using 512-word buffer
Architecture:
— Multi-Level Cell Technology: Highest Density
at Lowest Cost
— Symmetrically-blocked architecture (512-
Mbit, 1-Gbit, 2-Gbit)
— Asymmetrically-blocked architecture, Four 32-
KByte parameter blocks: Top or Bottom
configuration (512-Mbit, 1-Gbit)
— 128-KByte array blocks
— Blank Check to verify an erased block
Voltage and Power:
—V
CC
(core) voltage: 2.3V – 3.6V
—V
CCQ
(I/O) voltage: 2.3V – 3.6V
— Standby current: 70µA(Typ) for 512-Mbit,
75µA (Typ) for 1-Gbit
— Continuous synchronous read current (Easy
BGA): 21mA (Typ)/24mA (Max) at 52MHz
Enhanced Security:
— Absolute write protection: VPP = V
SS
— Power-transition erase/program lockout
— Individual zero-latency block locking
— Individual block lock-down capability
— Password Access feature
— One-Time Programmable Register:
— 64 OTP bits, programmed with unique
information by Numonyx
— 2112 OTP bits, available for customer
programming
Software:
— 25µs (Typ) program suspend
— 30µs (Typ) erase suspend
—Numonyx
®
Flash Data Integrator optimized
— Basic Command Set and Extended Function
Interface (EFI) Command Set compatible
— Common Flash Interface capable
Density and Packaging
— 56-Lead TSOP(512-Mbit, 1-Gbit)
— 64-Ball Easy BGA(512-Mbit, 1-Gbit, 2-Gbit)
— 16-bit wide data bus
Quality and Reliability
— JESD47E Compliant
— Operating temperature: –40°C to +85°C
— Minimum 100,000 erase cycles
— 65nm process technology
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