Datasheet 搜索 > Flash芯片 > Micron（镁光） > PC28F256P33TFE 数据手册 > PC28F256P33TFE 数据手册 1/88 页
器件3D模型￥ 47.077
PC28F256P33TFE 数据手册 - Micron（镁光）
制造商:
Micron（镁光）
分类:
Flash芯片
封装:
BGA-64
描述:
MICRON PC28F256P33TFE 闪存, 或非, 256 Mbit, 32M x 8位, 52 MHz, 并行, BGA, 64 引脚
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
原理图在P14
封装尺寸在P8P9P10
型号编码规则在P59
封装信息在P1P10
功能描述在P5
技术参数、封装参数在P8P9P43P45P46P49P50P51P54P55P58
电气规格在P46
型号编号列表在P59P60
导航目录
PC28F256P33TFE数据手册
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Datasheet Jul 2011
1 Order Number: 320003-10
Numonyx
®
Flash Memory (P33-65nm)
256-Mbit, 512-Mbit (256M/256M)
Datasheet
Product Features
High performance:
— 95ns initial access time for Easy BGA
— 105ns initial access time for TSOP
— 25ns 16-word asynchronous-page read
mode
— 52MHz (Easy BGA) with zero wait states,
17ns clock-to-data output synchronous-
burst read mode
— 4-, 8-, 16-, and continuous-word options
for burst mode
— Buffered Enhanced Factory Programming at
2.0MByte/s (typ) using 512-word buffer
— 3.0V buffered programming at 1.14 MByte/
s (Typ) using 512-word buffer
Architecture:
— Multi-Level Cell Technology: Highest
Density at Lowest Cost
— Asymmetrically-blocked architecture
— Four 32-KByte parameter blocks: top or
bottom configuration
— 128-KByte main blocks
— Blank Check to verify an erase block
Voltage and Power:
—V
CC
(core) voltage: 2.3 V – 3.6 V
—V
CCQ
(I/O) voltage: 2.3 V – 3.6 V
— Standby current: 65uA (Typ) for 256-Mbit
— Continuous synchronous read current: 21
mA (Typ)/24 mA (Max) at 52 MHz
Security:
— One-Time Programmable Registers:
— 64 unique factory device identifier bits
— 2112 user-programmable OTP bits
— Absolute write protection: V
PP
= V
SS
— Power-transition erase/program lockout
— Individual zero-latency block locking
— Individual block lock-down capability
— Password Access feature
Software:
— 25µs (Typ) program suspend
— 25µs (Typ) erase suspend
— Numonyx™ Flash Data Integrator optimized
— Basic Command Set and Extended Function
Interface Command Set compatible
— Common Flash Interface capable
Density and Packaging
— 56-Lead TSOP package (256-Mbit only)
— 64-Ball Easy BGA package (256, 512-Mbit)
— 16-bit wide data bus
Quality and Reliability
—JESD47E Compliant
— Operating temperature: –40 °C to +85 °C
— Minimum 100,000 erase cycles per block
— 65nm ETOX™ X process technology
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