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STM32F071V8H6 数据手册 - ST Microelectronics(意法半导体)
制造商:
ST Microelectronics(意法半导体)
分类:
微控制器
封装:
UFBGA-100
描述:
STMICROELECTRONICS STM32F071V8H6 微控制器, 32位, 线路接入, ARM 皮质-M0, 48 MHz, 64 KB, 16 KB, 100 引脚, UFBGA
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引脚图在P28P29P30P31P32P33P34P35P36P37P38Hot
典型应用电路图在P67P68P85
原理图在P12
封装尺寸在P97P98P99P100P101P102P103P104P105P106P107P108
型号编码规则在P115P116P117P118
技术参数、封装参数在P49
电气规格在P46P47P48P49P50P51P52P53P54P55P56P57
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STM32F071V8H6数据手册
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DocID025451 Rev 3 67/121
STM32F071CB STM32F071RB STM32F071VB STM32F071V8 Electrical characteristics
96
Figure 16. Typical application with an 8 MHz crystal
1. R
EXT
value depends on the crystal characteristics.
Low-speed external clock generated from a crystal resonator
The low-speed external (LSE) clock can be supplied with a 32.768 kHz crystal resonator
oscillator. All the information given in this paragraph are based on design simulation results
obtained with typical external components specified in Table 39. In the application, the
resonator and the load capacitors
have to be placed as close as possible to the oscillator
pins in order to minimize output distortion and startup stabilization time. Refer to the crystal
resonator manufacturer for more details on the resonator characteristics (frequency,
package, accuracy).
069
26&B,1
26&B287
5
)
%LDV
FRQWUROOHG
JDLQ
I
+6(
5
(;7
0+]
UHVRQDWRU
5HVRQDWRUZLWKLQWHJUDWHG
FDSDFLWRUV
&
/
&
/
Table 39. LSE oscillator characteristics (f
LSE
= 32.768 kHz)
Symbol Parameter Conditions
(1)
Min
(2)
Typ Max
(2)
Unit
I
DD
LSE current consumption
LSEDRV[1:0]=00
lower driving capability
-0.50.9
µA
LSEDRV[1:0]= 01
medium low driving capability
--1
LSEDRV[1:0] = 10
medium high driving capability
--1.3
LSEDRV[1:0]=11
higher driving capability
--1.6
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