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STM32F373V8H6 数据手册 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
分类:
微控制器
封装:
BGA-100
描述:
STMICROELECTRONICS STM32F373V8H6 微控制器, 32位, 16Σ-Δ模数转换器, ARM 皮质-M4F, 72 MHz, 64 KB, 16 KB, 100 引脚, BGA
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引脚图在P29P30P31P32P33P34P35P36P37P38P39P40Hot
典型应用电路图在P75P77P100
原理图在P12
封装尺寸在P115P116P117P118P119P120P121P122P123P124P125P126
型号编码规则在P128P129P130
标记信息在P117
技术参数、封装参数在P55
电气规格在P52P53P54P55P56P57P58P59P60P61P62P63
型号编号列表在P1
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STM32F373V8H6数据手册
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DocID022691 Rev 6 131/136
STM32F373xx Revision history
135
9 Revision history
Table 83. Document revision history
Date Revision Changes
18-Jun-2012 1 Initial release.
07-Sep-2012 2
Added ‘F’ to all ‘Cortex-M4’ occurrences
Modified the shapes of Figure 2: STM32F373xx LQFP48
pinout to Figure 4: STM32F373xx LQFP100 pinout
Added two rows ‘VREFSD+ - VDDSD3’ and ‘VREF+ - VDDA’
in Table 19: Voltage characteristics
Removed PB0 in footnote of Table 19: Voltage characteristics
and in Section 6.3.14: I/O port characteristics
Added a paragraph after ‘...power up sequence’ in
Section 6.2: Absolute maximum ratings and after ‘...in output
mode’ in I/O system current consumption
Corrected SDAC_VREF+ in Figure 9: Power supply scheme
Modified Table 20: Current characteristics
Added BGA100 in Table 22: General operating conditions
Added values in Table 27: Embedded internal reference
voltage
Filled values in Table 28: Typical and maximum current
consumption from VDD supply at VDD = 3.6 V
Filled values in Table 29: Typical and maximum current
consumption from VDDA supply
Filled values in Table 30: Typical and maximum VDD
consumption in Stop and Standby modes
Removed table: “Typical and maximum VDDA consumption in
Stop modes”
Filled values in Table 31: Typical and maximum VDDA
consumption in Stop and Standby modes
Added VBAT values in Table 32: Typical and maximum
current consumption from VBAT supply
Added typ values in Table 33: Typical current consumption in
Run mode, code with data processing running from Flash and
Table 34: Typical current consumption in Sleep mode, code
running from Flash or RAM
Added max value in Table 41: LSE oscillator characteristics
(fLSE = 32.768 kHz)
Modified min and max values in Table 42: HSI oscillator
characteristics
Added values in Table 37: Low-power mode wakeup timings
Added Class values in Table 47: EMS characteristics
Modified values in Table 48: EMI characteristics
Added values in Table 49: ESD absolute maximum ratings
Added class value in Table 50: Electrical sensitivities
Modified values and descriptions in Table 51: I/O current
injection susceptibility
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