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STM32L152V8H6 数据手册 - ST Microelectronics(意法半导体)
制造商:
ST Microelectronics(意法半导体)
分类:
微控制器
封装:
UFBGA-100
描述:
极低功耗系列带LCD,32位MCU
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
引脚图在P31P32P33P34P35P36P37P38P39P40P41P42Hot
典型应用电路图在P74P96
封装尺寸在P105P106P107P108P109P110P111P112P113P114P115P116
型号编码规则在P55P125
技术参数、封装参数在P52
电气规格在P49P50P51P52P53P54P55P56P57P58P59P60
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STM32L152V8H6数据手册
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DocID17659 Rev 12 85/133
STM32L151x6/8/B STM32L152x6/8/B Electrical characteristics
104
Figure 19. I/O AC characteristics definition
6.3.14 NRST pin characteristics
The NRST pin input driver uses CMOS technology. It is connected to a permanent pull-up
resistor, RPU (see
Table 45).
Unless otherwise specified, the parameters given in Table 45 are derived from tests
performed under ambient temperature and V
DD
supply voltage conditions summarized in
Table 13.
AIC
T
R)/OUT
/54054
%84%2.!,
/.P&
-AXIMUMFREQUENCYISACHIEVEDIFT
R
T
F
4ANDIFTHEDUTYCYCLEIS
WHENLOADEDBYP&
4
T
F)/OUT
Table 45. NRST pin characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
IL(NRST)
(1)
1. Guaranteed by design.
NRST input low level voltage - - - 0.8
V
V
IH(NRST)
(1)
NRST input high level voltage - 1.4 -
V
OL(NRST)
(1)
NRST output low level
voltage
I
OL
= 2 mA
2.7 V < V
DD
< 3.6 V
--
0.4
I
OL
= 1.5 mA
1.65 V < V
DD
< 2.7 V
--
V
hys(NRST)
(1)
NRST Schmitt trigger voltage
hysteresis
--10%V
DD
(2)
2. 200 mV minimum value
mV
R
PU
Weak pull-up equivalent
resistor
(3)
3. The pull-up is designed with a true resistance in series with a switchable PMOS. This PMOS contribution to
the series resistance is around 10%.
V
IN
= V
SS
30 45 60 kΩ
V
F(NRST)
(1)
NRST input filtered pulse - - - 50 ns
V
NF(NRST)
(1)
NRST input not filtered pulse - 350 - ns
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