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120NQ045PBF 其他数据使用手册 - VISHAY（威世）
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120NQ045PBF数据手册
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VS-120NQ045PbF
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Vishay Semiconductors
Revision: 01-Apr-14
3
Document Number: 94458
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Fig. 5 - Maximum Allowable Case Temperature vs. Average
Forward Current
Fig. 6 - Forward Power Loss Characteristics
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
01020 4030 50
1000
10 000
T
J
= 25 °C
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
10
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
20015010050
250
0
80
160
20
40
60
120
140
100
Square wave (D = 0.50)
80 % rated V
R
applied
See note (1)
DC
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
1601208040 1401006020
180
0
120
140
0
40
80
100
60
20
DC
RMS limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
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