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2N4124 其他数据使用手册 - Samsung（三星）
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2N4124数据手册
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© Semiconductor Components Industries, LLC, 2008
November, 2008 − Rev. 4
1 Publication Order Number:
2N4123/D
2N4123, 2N4124
General Purpose
Transistors
NPN Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage
2N4123
2N4124
V
CEO
30
25
Vdc
Collector−Base Voltage
2N4123
2N4124
V
CBO
40
30
Vdc
Emitter−Base Voltage V
EBO
5.0 Vdc
Collector Current − Continuous I
C
200 mAdc
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
1.5
12
W
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient R
q
JA
200 °C/W
Thermal Resistance, Junction−to−Case R
q
JC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
x = 3 or 4
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
2N
412x
AYWW G
G
2N4124G TO−92
(Pb−Free)
5000 Units / Bulk
Device Package Shipping
†
2N4123RLRM TO−92 2000 / Tape & Ammo
ORDERING INFORMATION
1
2
3
1
2
BENT LEAD
TAPE & REEL
AMMO PACK
STRAIGHT LEAD
BULK PACK
3
TO−92
CASE 29
STYLE 1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure
,
BRD8011
/
D.
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