Datasheet 搜索 > 晶体管 > Central Semiconductor > 2N4391 数据手册 > 2N4391 其他数据使用手册 1/4 页
￥ 7.668
2N4391 其他数据使用手册 - Central Semiconductor
制造商:
Central Semiconductor
分类:
晶体管
封装:
TO-18
描述:
2N 系列 40 V 150 mA N 沟道 结场效应晶体管 - TO-18
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
封装尺寸在P2P4
标记信息在P1P2
电气规格在P1P2P3
导航目录
2N4391数据手册
Page:
of 4 Go
若手册格式错乱，请下载阅览PDF原文件
2N4391
2N4392
2N4393
SILICON
N-CHANNEL JFET
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N4391 series
types are N-Channel silicon JFETs designed for analog
switching and chopper applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (T
A
=25°C) SYMBOL UNITS
Gate-Drain Voltage V
GD
40 V
Gate-Source Voltage V
GS
40 V
Gate Current I
G
50 mA
Power Dissipation (T
C
=25°C) P
D
1.8 W
Operating and Storage
Junction Temperature T
J
, T
stg
-65 to +175 °C
ELECTRICAL CHARACTERISTICS: (T
A
=25°C unless otherwise noted)
2N4391 2N4392 2N4393
SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX UNITS
I
GSS
V
GS
=20V - 0.1 - 0.1 - 0.1 nA
I
GSS
V
GS
=20V, T
A
=125°C - 0.2 - 0.2 - 0.2 µA
I
DSS
V
DS
=20V 50 150 25 75 5.0 30 mA
I
D(OFF)
V
DS
=20V, V
GS
=12V - 0.1 - - - - nA
I
D(OFF)
V
DS
=20V, V
GS
=7.0V - - - 0.1 - - nA
I
D(OFF)
V
DS
=20V, V
GS
=5.0V - - - - - 0.1 nA
I
D(OFF)
V
DS
=20V, V
GS
=12V, T
A
=150°C - 0.2 - - - - µA
I
D(OFF)
V
DS
=20V, V
GS
=7.0V, T
A
=150°C - - - 0.2 - - µA
I
D(OFF)
V
DS
=20V, V
GS
=5.0V, T
A
=150°C - - - - - 0.2 µA
BV
GSS
I
G
=1.0µA 40 - 40 40 - V
V
GS(OFF)
V
DS
=20V, I
D
=1.0nA 4.0 10 2.0 5.0 0.5 3.0 V
V
GS(f)
V
DS
=0, I
G
=1.0mA - 1.0 - 1.0 - 1.0 V
V
DS(ON)
I
D
=12mA - 0.4 - - - - V
V
DS(ON)
I
D
=6.0mA - - - 0.4 - - V
V
DS(ON)
I
D
=3.0mA - - - - - 0.4 V
r
DS(ON)
I
D
=1.0mA, V
GS
=0 - 30 - 60 - 100
r
ds(on)
V
GS
=0, I
D
=0, f=1.0kHz - 30 - 60 - 100
C
rss
V
GS
=12V, V
DS
=0, f=1.0MHz - 3.5 - - - - pF
C
rss
V
GS
=7.0V, V
DS
=0, f=1.0MHz - - - 3.5 - - pF
C
rss
V
GS
=5.0V, V
DS
=0, f=1.0MHz - - - - - 3.5 pF
C
iss
V
DS
=20V, V
GS
=0, f=1.0MHz - 14 - 14 - 14 pF
TO-18 CASE
R2 (26-September 2016)
www.centralsemi.com
器件 Datasheet 文档搜索
AiEMA 数据库涵盖高达 72,405,303 个元件的数据手册，每天更新 5,000 多个 PDF 文件
