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2N4391-E3 其他数据使用手册 - Vishay Siliconix
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Vishay Siliconix
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JFET晶体管
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TO-206
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2N4391-E3数据手册
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51 Ω
51 Ω
1 kΩ
V
IN
Scope
V
DD
R
L
OUT
V
GS(H)
V
GS(L)
2N/PN/SST4391 Series
Vishay Siliconix
www.vishay.com
7-6
Document Number: 70241
S-04028—Rev. F, 04-Jan-01
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Common-Gate Output Admittance
100
10
1
0.1
100 1000200 500
(mS)
V
DG
= 10 V
I
D
= 10 mA
T
A
= 25_C
f – Frequency (MHz)
Transfer Characteristics
100
0 –5
80
60
40
20
0
V
GS
– Gate-Source Voltage (V)
–1 –2 –3 –4
V
DS
= 20 V
T
A
= –55_C
25_C
Transconductance vs. Drain Current
100
10
1
0.1 1.0 10
I
D
– Drain Current (mA)
V
GS(off)
= –2 V
Output Characteristics
100
010
80
60
40
20
0
V
DS
– Drain-Source Voltage (V)
2468
125_C
g
og
b
og
T
A
= –55_C
125_C
V
GS
= 0 V
–0.5 V
–1.0 V
–1.5 V
–2.0 V
–2.5 V
V
GS(off)
= –4 V
25_C
V
DS
= 10 V
f = 1 kHz
V
GS(off)
= –4 V
g
fs
– Forward Transconductance (mS)
I
D
– Drain Current (mA)
I
D
– Drain Current (mA)
SWITCHING TIME TEST CIRCUIT
4391 4392 4393
V
GS(L)
–12 V –7 V –5 V
R
L
*
800 1600 3000
I
D(on)
12 mA 6 mA 3 mA
*Non-inductive
INPUT PULSE SAMPLING SCOPE
Rise Time < 1 ns
Fall Time < 1 ns
Pulse Width 100 ns
PRF 1 MHz
Rise Time 0.4 ns
Input Resistance 10 M
Input Capacitance 1.5 pF
See Typical Characteristics curves for changes.
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