Datasheet 搜索 > 双极性晶体管 > Fairchild（飞兆/仙童） > 2N5087TA 数据手册 > 2N5087TA 其他数据使用手册 1/10 页
￥ 0.215
2N5087TA 其他数据使用手册 - Fairchild（飞兆/仙童）
制造商:
Fairchild（飞兆/仙童）
分类:
双极性晶体管
封装:
TO-226-3
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
封装尺寸在P7P8
技术参数、封装参数在P1P9
电气规格在P1
导航目录
2N5087TA数据手册
Page:
of 10 Go
若手册格式错乱，请下载阅览PDF原文件
©2003 Fairchild Semiconductor Corporation Rev. B1, September 2003
2N5086/2N5087/MMBT5087
Absolute Maximum Ratings*
T
a
=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
a
=25°C unless otherwise noted
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage -50 V
V
CBO
Collector-Base Voltage -50 V
V
EBO
Emitter-Base Voltage -3.0 V
I
C
Collector current - Continuous -100 mA
T
J
, T
stg
Junction and Storage Temperature -55 ~ +150 °C
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
V
(BR)CEO
Collector-Emitter Breakdown Voltage * I
C
= -1.0mA, I
B
= 0 -50 V
V
(BR)CBO
Collector-Base Breakdown Voltage I
C
= -100µA, I
E
= 0 -50 V
I
CEO
Collector Cutoff Current V
CB
= -10V, I
E
= 0
V
CB
= -35V, I
E
= 0
-10
-50
nA
nA
I
CBO
Emitter Cutoff Current V
EB
= -3.0V, I
C
= 0 -50 nA
On Characteristics
h
FE
DC Current Gain I
C
= -100µA, V
CE
= -5.0V
I
C
= -1.0mA, V
CE
= -5.0V
I
C
= -10mA, V
CE
= -5.0V
5086
5087
5086
5087
5086
5087
150
250
150
250
150
250
500
800
V
CE(sat)
Collector-Emitter Saturation Voltage I
C
= -10mA, I
B
= -1.0mA -0.3 V
V
BE(on)
Base-Emitter On Voltage I
C
= -1.0mA, V
CE
= -5.0V -0.85 V
Small Signal Characteristics
f
T
Current Gain Bandwidth Product I
C
= -500µA, V
CE
= -5.0V, f = 20MHz 40 MHz
C
cb
Collector-Base Capacitance V
CB
= -5.0V, I
E
= 0, f = 100KHz 4.0 pF
h
fe
Small-Signal Current Gain I
C
= -1.0mA, V
CE
= -5.0V,
f = 1.0KHz
5086
5087
150
250
600
900
NF Noise Figure I
C
= -100µA, V
CE
= -5.0V
R
S
= 3.0kΩ, f = 1.0KHz
I
C
= -20µA, V
CE
= -5.0V
R
S
= 10kΩ
f = 10Hz to 15.7KHz
5086
5087
5086
5087
3.0
2.0
3.0
2.0
dB
dB
dB
dB
2N5086/2N5087/MMBT5087
PNP General Purpose Amplifier
• This device is designed for low level, high gain, low
noise general purpose amplifier applications at
collector currents to 50mA.
SOT-23
1. Base 2. Emitter 3. Collector
1
2
3
Mark: 2Q
TO-92
1
1. Emitter 2. Base 3. Collector
器件 Datasheet 文档搜索
AiEMA 数据库涵盖高达 72,405,303 个元件的数据手册，每天更新 5,000 多个 PDF 文件
