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2N7002E-T1-E3 其他数据使用手册 - Vishay Semiconductor（威世）
制造商:
Vishay Semiconductor（威世）
分类:
MOS管
封装:
TO-236
描述:
VISHAY 2N7002E-T1-E3 场效应管, MOSFET, N沟道, 60V, 240mA TO-236, 整卷
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2N7002E-T1-E3数据手册
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Vishay Siliconix
2N7002E
Document Number: 70860
S11-0183-Rev. F, 07-Feb-11
www.vishay.com
1
N-Channel 60 V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Low On-Resistance: 3
• Low Threshold: 2 V (typ.)
• Low Input Capacitance: 25 pF
• Fast Switching Speed: 7.5 ns
• Low Input and Output Leakage
• Compliant to RoHS Directive 2002/95/EC
BENEFITS
• Low Offset Voltage
• Low-Voltage Operation
• Easily Driven Without Buffer
• High-Speed Circuits
• Low Error Voltage
APPLICATIONS
• Direct Logic-Level Interface: TTL/CMOS
• Drivers: Relays, Solenoids, Lamps, Hammers, Display,
Memories, Transistors, etc.
• Battery Operated Systems
• Solid-State Relays
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
()I
D
(mA)
60
3 at V
GS
= 10 V
240
G
S
D
Top View
2
3
TO-236
(SOT-23)
1
Marking Code: 7E
Ordering Information: 2N7002E-T1-E3 (Lead (Pb)-free)
2N7002E-T1-GE3 (Lead (Pb)-free and Halogen-free)
Notes:
a. Pulse width limited by maximum junction temperature.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
60
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
T
A
= 25 °C
I
D
240
mA
T
A
= 70 °C
190
Pulsed Drain Current
a
I
DM
1300
Power Dissipation
T
A
= 25 °C
P
D
0.35
W
T
A
= 70 °C
0.22
Thermal Resistance, Junction-to-Ambient
R
thJA
357 °C/W
Operating Junction and Storage Temperature Range
T
J,
T
stg
- 55 to 150 °C
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