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2N7002K 其他数据使用手册 - ON Semiconductor（安森美）
制造商:
ON Semiconductor（安森美）
分类:
MOS管
封装:
SOT-23-3
描述:
小信号MOSFET 60 V 380 mA时，单N通道， SOT -23 Small Signal MOSFET 60 V, 380 mA, Single, N−Channel, SOT−23
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2N7002K数据手册
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2N7002K — N-Channel Enhancement Mode Field Effect Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N7002K Rev. 1.1.0
September 2014
2N7002K
N-Channel Enhancement Mode Field Effect Transistor
Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input / Output Leakage
• Ultra-Small Surface Mount Package
• Pb Free / RoHS Compliant
• ESD HBM = 2000 V (Typical: 3000 V) as per JESD22 A114
and ESD CDM = 2000 V as per JESD22 C101
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Part Number Top Mark Package Packing Method
2N7002K 7K SOT-23 3L Tape and Reel
Symbol Parameter Value Unit
V
DSS
Drain-Source Voltage 60 V
V
DGR
Drain-Gate Voltage (R
GS
≤ 1.0 MΩ) 60 V
V
GSS
Gate-Source Voltage ±20 V
I
D
Drain Current
Continuous 300
mA
Pulsed 800
T
J
Operating Junction Temperature Range -55 to +150 °C
T
STG
Storage Temperature Range -55 to +150 °C
D
SG
S
D
G
SOT-23
Marking: 7K
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