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2N7002K-T1-E3 其他数据使用手册 - Vishay Siliconix
制造商:
Vishay Siliconix
分类:
MOS管
封装:
SOT-23-3
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2N7002K-T1-E3数据手册
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若手册格式错乱，请下载阅览PDF原文件
2N7002K
www.vishay.com
Vishay Siliconix
S17-1299-Rev. F, 21-Aug-17
1
Document Number: 71333
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-Channel 60 V (D-S) MOSFET
Marking code: 7K
FEATURES
• Low on-resistance: 2
• Low threshold: 2 V (typ.)
• Low input capacitance: 25 pF
• Fast switching speed: 25 ns
• Low input and output leakage
• TrenchFET
®
power MOSFET
• 2000 V ESD protection
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
*
This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details
BENEFITS
• Low offset voltage
• Low voltage operation
• Easily driven without buffer
• High speed circuits
• Low error voltage
APPLICATIONS
• Direct logic-level interface: TTL/CMOS
• Drivers:
relays, solenoids, lamps, hammers,
display, memories, transistors, etc.
• Battery operated systems
• Solid state relays
Notes
a. Pulse width limited by maximum junction temperature
b. Surface mounted on FR4 board
PRODUCT SUMMARY
V
DS
(V) 60
R
DS(on)
max. () at V
GS
= 10 V 2
Q
g
typ. (nC) 0.4
I
D
(mA) 300
Configuration Single
Top View
SOT-23 (TO-236)
1
G
2
S
D
3
Available
Available
Available
N-Channel MOSFET
S
D
G
ORDERING INFORMATION
Package SOT-23
Lead (Pb)-free 2N7002K-T1-E3
Lead (Pb)-free and halogen-free 2N7002K-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage V
DS
60
V
Gate-source voltage V
GS
± 20
Continuous drain current (T
J
= 150 °C)
b
T
A
= 25 °C
I
D
300
mAT
A
= 100 °C 190
Pulsed drain current
a
I
DM
800
Power dissipation
b
T
A
= 25 °C
P
D
0.35
W
T
A
= 100 °C 0.14
Maximum junction-to-ambient
b
R
thJA
350 °C/W
Operating junction and storage temperature range T
J,
T
stg
-55 to +150 °C
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