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2SAR512RTL 其他数据使用手册 - ROHM Semiconductor（罗姆半导体）
制造商:
ROHM Semiconductor（罗姆半导体）
分类:
双极性晶体管
封装:
SOT-346-3
描述:
三极管(BJT) 2SAR512RTL SOT-346
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2SAR512RTL数据手册
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2SAR512R
Datasheet
llAbsolute maximum ratings (T
a
= 25°C)
Parameter Symbol Values Unit
Collector-base voltage
V
CBO
-30 V
Collector-emitter voltage
V
CEO
-30 V
Emitter-base voltage
V
EBO
-6 V
Collector current
I
C
-2 A
I
CP
*1
-4 A
Power dissipation
P
D
*2
0.5 W
P
D
*3
1.0 W
Junction temperature
T
j
150 ℃
Range of storage temperature
T
stg
-55 to +150 ℃
llElectrical characteristics (T
a
= 25°C)
Parameter Symbol Conditions
Values
Unit
Min. Typ. Max.
Collector-base breakdown
voltage
BV
CBO
I
C
= -100μA -30 - - V
Collector-emitter breakdown
voltage
BV
CEO
I
C
= -1mA
-30 - - V
Emitter-base breakdown voltage
BV
EBO
I
E
= -100μA -6 - - V
Collector cut-off current
I
CBO
V
CB
= -30V - - -1.0 μA
Emitter cut-off current
I
EBO
V
EB
= -4V - - -1.0 μA
Collector-emitter saturation voltage
V
CE(sat)
*4
I
C
= -700mA, I
B
= -35mA
- -200 -400 mV
DC current gain
h
FE
V
CE
= -2V, I
C
= -100mA 200 - 500 -
Transition frequency
f
T
*4
V
CE
= -10V, I
E
= 100mA,
f = 100MHz
- 430 - MHz
Output capacitance
C
ob
V
CB
= -10V, I
E
= 0A,
f = 1MHz
- 15 - pF
Turn-On time
t
on
I
C
= -1A,
I
B1
= -100mA,
I
B2
= 100mA,
V
CC
⋍ -10V,
R
L
= 10Ω
See test circuit
- 30 - ns
Storage time
t
stg
- 170 - ns
Fall time
t
f
- 15 - ns
*1 PW=10ms ,Single pulse
*2 Each terminal mounted on a reference land.
*3 Mounted on a ceramic board(40×40×0.7mm ).
*4 Pulsed
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20160107 - Rev.003
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