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AP6502SP-13 产品描述及参数 - Diodes（美台）
制造商:
Diodes（美台）
分类:
DC/DC转换器
封装:
SO-EP-8
描述:
AP6502SP-13 编带
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
引脚图在P1P2Hot
典型应用电路图在P1
原理图在P2
封装尺寸在P13
焊盘布局在P14
型号编码规则在P13
标记信息在P13
封装信息在P13
技术参数、封装参数在P3
应用领域在P1P8P9P10P11P12
电气规格在P4P7
导航目录
AP6502SP-13数据手册
Page:
of 15 Go
若手册格式错乱，请下载阅览PDF原文件
AP6502
Document Number: DS35423 Rev. 10 - 2
3 of 14
www.diodes.com
May 2017
© Diodes Incorporated
NEW PROD UC T
AP6502
Absolute Maximum Ratings (Note 4) (@T
A
= +25°C, unless otherwise specified.)
Symbol
Parameter
Rating
Unit
V
IN
Supply Voltage
-0.3 to +20
V
V
SW
Switch Node Voltage
-1.0 to V
IN
+0.3
V
V
BST
Bootstrap Voltage
V
SW
-0.3 to V
SW
+6
V
V
FB
Feedback Voltage
-0.3 to +6
V
V
EN
Enable/UVLO Voltage
-0.3 to +6
V
V
COMP
Comp Voltage
-0.3 to +6
V
T
ST
Storage Temperature
-65 to +150
°C
T
J
Junction Temperature
+150
°C
T
L
Lead Temperature
+260
°C
ESD Susceptibility (Note 5)
HBM
Human Body Model
3
kV
MM
Machine Model
250
V
Notes: 4. Stresses greater than the 'Absolute Maximum Ratings' specified above may cause permanent damage to the device. These are stress ratings only;
functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability
may be affected by exposure to absolute maximum rating conditions for extended periods of time.
5. Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when
handling and transporting these devices.
Thermal Resistance (Note 6) (@T
A
= +25°C, unless otherwise specified.)
Symbol
Parameter
Rating
Unit
θ
JA
Junction to Ambient
SO-8EP
74
°C/W
θ
JC
Junction to Case
SO-8EP
16
Note: 6. Test condition: SO-8EP: Device mounted on 1" x 1" FR-4 substrate PC board, 2oz copper, with minimum recommended pad on top layer and
thermal vias to bottom layer ground plane.
Recommended Operating Conditions (Note 7) (@T
A
= +25°C, unless otherwise specified.)
Symbol
Parameter
Min
Max
Unit
V
IN
Supply Voltage
4.7
18
V
T
A
Operating Ambient Temperature Range
-40
+85
°C
Note: 7. The device function is not guaranteed outside of the recommended operating conditions.
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