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AT28C64E-15TI 其他数据使用手册 - ATMEL（爱特美尔）
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AT28C64E-15TI数据手册
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Features
•
Fast Read Access Time – 120 ns
•
Fast Byte Write – 200 µs
•
Self-timed Byte Write Cycle
– Internal Address and Data Latches
– Internal Control Timer
– Automatic Clear Before Write
•
Direct Microprocessor Control
–READY/BUSY
Open Drain Output
–DATA
Polling
•
Low Power
– 30 mA Active Current
– 100 µA CMOS Standby Current
•
High Reliability
– Endurance: 10
5
Cycles
– Data Retention: 10 Years
•
5V ± 10% Supply
•
CMOS and TTL Compatible Inputs and Outputs
•
JEDEC Approved Byte-wide Pinout
•
Industrial Temperature Ranges
•
Green (Pb/Halide-Free) Packaging Option
1. Description
The AT28C64E is a low-power, high-performance 8,192 words by 8-bit nonvolatile
electrically erasable and programmable read-only memory with popular, easy-to-use
features. The device is manufactured with Atmel’s reliable nonvolatile technology.
The AT28C64E is accessed like a Static RAM for the read or write cycles without the
need for external components. During a byte write, the address and data are latched
internally, freeing the microprocessor address and data bus for other operations. Fol-
lowing the initiation of a write cycle, the device will go to a busy state and
automatically clear and write the latched data using an internal control timer. The
device includes two methods for detecting the end of a write cycle, level detection of
RDY/BUSY
(unless pin 1 is N.C.) and DATA Polling of I/O
7
. Once the end of a write
cycle has been detected, a new access for a read or write can begin.
The CMOS technology offers fast access times of 120 ns at low power dissipation.
When the chip is deselected, the standby current is less than 100 µA.
Atmel’s AT28C64E has additional features to ensure high quality and manufacturabil-
ity. The device utilizes error correction internally for extended endurance and for
improved data retention characteristics. An extra 32 bytes of EEPROM are available
for device identification or tracking.
64K (8K x 8)
Parallel
EEPROMs
AT28C64E
0001I–PEEPR–10/06
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