Web Analytics
Datasheet 搜索 > Flash芯片 > ATMEL(爱特美尔) > AT29LV010A-25TI 数据手册 > AT29LV010A-25TI 其他数据使用手册 1/16 页
AT29LV010A-25TI
0
导航目录
  • 引脚图在P2
  • 原理图在P3
  • 封装尺寸在P14P15
  • 型号编码规则在P13
  • 封装信息在P14
AT29LV010A-25TI数据手册
Page:
of 16 Go
若手册格式错乱,请下载阅览PDF原文件
Features
Single Supply Voltage, Range 3V to 3.6V
3-volt Only Read and Write Operation
Software Protected Programming
Fast Read Access Time - 120 ns
Low Power Dissipation
15 mA Active Current
40 µA CMOS Standby Current
Sector Program Operation
Single Cycle Reprogram (Erase and Program)
1024 Sectors (128 Bytes/Sector)
Internal Address and Data Latches for 128 Bytes
Two 8K Bytes Boot Blocks with Lockout
Fast Sector Program Cycle Time – 20 ms
Internal Program Control and Timer
DATA Polling for End of Program Detection
Typical Endurance > 10,000 Cycles
CMOS and TTL Compatible Inputs and Outputs
Commercial and Industrial Temperature Ranges
1. Description
The AT29LV010A is a 3-volt only in-system Flash programmable and erasable read
only memory (Flash). Its 1 megabit of memory is organized as 131,072 bytes by 8 bits.
Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers
access times to 120 ns with power dissipation of just 54 mW over the commercial tem-
perature range. When the device is deselected, the CMOS standby current is less
than 40 µA. The device endurance is such that any sector can typically be written to in
excess of 10,000 times.
To allow for simple in-system reprogrammability, the AT29LV010A does not require
high input voltages for programming. Three-volt-only commands determine the opera-
tion of the device. Reading data out of the device is similar to reading from an
EPROM. Reprogramming the AT29LV010A is performed on a sector basis; 128 bytes
of data are loaded into the device and then simultaneously programmed.
During a reprogram cycle, the address locations and 128 bytes of data are captured at
microprocessor speed and internally latched, freeing the address and data bus for
other operations. Following the initiation of a program cycle, the device will automati-
cally erase the sector and then program the latched data using an internal control
timer. The end of a program cycle can be detected by DATA
polling of I/O7. Once the
end of a program cycle has been detected, a new access for a read or program can
begin.
1-megabit
(128K x 8)
3-volt Only
Flash Memory
AT29LV010A
0520E–FLASH–2/05

AT29LV010A-25TI 数据手册

ATMEL(爱特美尔)
16 页 / 0.3 MByte
ATMEL(爱特美尔)
16 页 / 0.3 MByte

AT29LV010A25 数据手册

ATMEL(爱特美尔)
ATMEL(爱特美尔)
ATMEL(爱特美尔)
ATMEL(爱特美尔)
Microchip(微芯)
Microchip(微芯)
Microchip(微芯)
Microchip(微芯)
器件 Datasheet 文档搜索
器件加载中...
AiEMA 数据库涵盖高达 72,405,303 个元件的数据手册,每天更新 5,000 多个 PDF 文件