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AT49F4096A-70TI
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  • 引脚图在P1
  • 原理图在P3
  • 封装尺寸在P18
  • 型号编码规则在P14
  • 封装信息在P15
AT49F4096A-70TI数据手册
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1
Features
Single-voltage Operation
–5V Read
5V Programming
Fast Read Access Time – 70 ns
Internal Erase/Program Control
Sector Architecture
One 8K Word (16K Bytes) Boot Block with Programming Lockout
Two 4K Word (8K Bytes) Parameter Blocks
One 240K Word (480K Bytes) Main Memory Array Block
Fast Sector Erase Time – 10 Seconds
Byte-by-byte or Word-by-word Programming – 10 µs Typical
Hardware Data Protection
Data Polling for End of Program Detection
Low Power Dissipation
50 mA Active Current
100 µA CMOS Standby Current
Typical 10,000 Write Cycles
Description
The AT49F4096A is a 5-volt, 4-megabit Flash memory organized as 524,288 words of
8 bits each or 256K words of 16 bits each. Manufactured with Atmel’s advanced non-
volatile CMOS technology, the device offers access times to 70 ns with power
dissipation of just 275 mW. When deselected, the CMOS standby current is less than
100 µA.
The device contains a user-enabled “boot block” protection feature. The AT49F4096A
locates the boot block at lowest order addresses (“bottom boot”).
To allow for simple in-system reprogrammability, the AT49F4096A does not require
high-input voltages for programming. Reading data out of the device is similar to read-
ing from an EPROM; it has standard CE
, OE and WE inputs to avoid bus contention.
Reprogramming the AT49F4096A is performed by first erasing a block of data and
then programming on a byte-by-byte or word-by-word basis.
Pin Configurations
Pin Name Function
A0 - A17 Addresses
CE
Chip Enable
OE
Output Enable
WE Write Enable
RESET
Reset
I/O0 - I/O15 Data Inputs/Outputs
I/O15(A-1) I/O15 (Data Input/Output, Word Mode)
A-1 (LSB Address Input, Byte Mode)
BYTE
Selects Byte or Word Mode
NC No Connect
4-megabit
(512K x 8/
256K x 16)
Flash Memory
AT49F4096A
Rev. 1604E–FLASH–11/02

AT49F4096A-70TI 数据手册

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AT49F4096A70 数据手册

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