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BAS116 其他数据使用手册 - Diodes（美台）
制造商:
Diodes（美台）
分类:
整流二极管
封装:
SOT-23-3
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BAS116数据手册
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BAS116L
Low-leakage diode
4 May 2016 Product data sheet
1. General description
Single low leakage current switching diode, encapsulated in a leadless ultra small DFN1006-2
(SOD882) Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
• Switching time typical: t
rr
= 0.8 µs
• Low leakage current typical: I
R
= 3 pA
• Repetitive peak reverse voltage: V
RRM
≤ 85 V
• Low capacitance typical: C
d
= 2 pF
• Leadless ultra small SMD plastic package
• Low package height of 0.48 mm
• AEC-Q101 qualified
3. Applications
• Low-leakage current applications
• General-purpose switching
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
RRM
repetitive peak reverse
voltage
T
j
= 25 °C - - 85 V
I
F
forward current T
amb
= 25 °C [1] - - 325 mA
V
R
reverse voltage T
j
= 25 °C - - 75 V
V
F
forward voltage I
F
= 150 mA; T
j
= 25 °C - - 1.25 V
I
R
reverse current V
R
= 75 V; T
j
= 25 °C - 0.003 5 nA
t
rr
reverse recovery time I
F
= 10 mA; I
R
= 10 mA; I
R(meas)
= 1 mA;
R
L
= 100 Ω; T
amb
= 25 °C
- 0.8 3 µs
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
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