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BAS116 产品封装文件 - Taiwan Semiconductor（台湾半导体）
制造商:
Taiwan Semiconductor（台湾半导体）
分类:
小信号二极管
封装:
SOT-23
描述:
Taiwan Semiconductor### 二极管和整流器，Taiwan Semiconductor
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BAS116数据手册
Page:
of 3 Go
若手册格式错乱，请下载阅览PDF原文件
BAS116T, BAW156T,
BAV170T, BAV199T
Document number: DS30258 Rev. 12 - 2
1 of 3
www.diodes.com
March 2009
© Diodes Incorporated
BAS116T, BAW156T,
BAV170T, BAV199T
SURFACE MOUNT LOW LEAKAGE DIODE
Features
• Ultra-Small Surface Mount Package
• Very Low Leakage Current
• Lead Free/RoHS Compliant (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
• "Green" Device (Notes 3 and 4)
Mechanical Data
• Case: SOT-523
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
• Polarity: See Diagrams Below
• Marking Information: See Diagrams Below and Page 3
• Ordering Information: See Page 2
• Weight: 0.002 grams (approximate)
Top View BAS116T Marking: 50 BAW156T Marking: 53 BAV170T Marking: 51 BAV199T Marking: 52
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
85 V
RMS Reverse Voltage
V
R
(
RMS
)
60 V
Forward Continuous Current (Note 1) Single Diode
Double Diode
I
FM
215
125
mA
Repetitive Peak Forward Current
I
FRM
500 mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0
μ
s
@ t = 1.0ms
@ t = 1.0s
I
FSM
4.0
1.0
0.5
A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 1)
P
D
150 mW
Thermal Resistance Junction to Ambient Air (Note 1)
R
θ
JA
833
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-65 to +150
°C
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 5)
V
(
BR
)
R
85
⎯ ⎯
V
I
R
= 100μA
Forward Voltage
V
F
⎯ ⎯
0.90
1.0
1.1
1.25
V
I
F
= 1.0mA
I
F
= 10mA
I
F
= 50mA
I
F
= 150mA
Leakage Current (Note 5)
I
R
⎯ ⎯
5.0
80
nA
nA
V
R
= 75V
V
R
= 75V, T
j
= 150°C
Total Capacitance
C
T
⎯
2
⎯
pF
V
R
= 0, f = 1.0MHz
Reverse Recovery Time
t
rr
⎯ ⎯
3.0
μs
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
, R
L
= 100Ω
Notes: 1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb
2
O
3
Fire Retardants.
5. Short duration pulse test used to minimize self-heating effect.
SOT-523
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