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BAS40-05-7 其他数据使用手册 - Diodes（美台）
制造商:
Diodes（美台）
分类:
二极管阵列
封装:
SOT-23-3
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BAS40-05-7数据手册
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若手册格式错乱，请下载阅览PDF原文件
BAS40 / -04 / -05 / -06
Taiwan Semiconductor
1 Version:G1702
200mW, Low VF SMD Schottky Barrier Diode
FEATURES
● Designed for mounting on small surface
● Low Capacitance
● Low forward voltage drop
● Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● Adapters
● For switching power supply
● Low stored charge
● Inverter
MECHANICAL DATA
● Case: SOT-23
● Molding compound: UL flammability classification
rating 94V-0
● Moisture sensitivity level: level 1, per J-STD-020
● Packing code with suffix "G" means green compound
(halogen-free)
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 1A whisker test
● Weight: 8 mg (approximately)
KEY PARAMETERS
PARAMETER
VALUE
UNIT
I
F(AV)
200
mA
V
RRM
40
V
I
FSM
0.6
A
V
F
at I
F
=40mA
1
V
T
J
Max.
125
°C
Package
SOT-23
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted)
PARAMETER
SYMBOL
BAS40
BAS40-
04
BAS40-
05
BAS40-
06
UNIT
Marking code on the device
43
44
45
46
Repetitive peak reverse voltage
V
RRM
40
V
Forward current
I
F(AV)
200
mA
Non-repetitive peak forward surge
current @ t = 8.3ms
I
FSM
0.6
A
Junction temperature range
T
J
-65 to +125
°C
Storage temperature range
T
STG
-65 to +125
°C
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