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BAS70-04 其他数据使用手册 - Taiwan Semiconductor（台湾半导体）
制造商:
Taiwan Semiconductor（台湾半导体）
分类:
肖特基二极管
封装:
SOT-23-3
描述:
1A，Taiwan Semiconductor低功率损耗 低正向压降 高电流容量 ### 二极管和整流器，Taiwan Semiconductor
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BAS70-04数据手册
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of 5 Go
若手册格式错乱，请下载阅览PDF原文件
- Low turn-on voltage
- Fast switching
- PN junction guard ring for transient and ESD protection
- Case: SOT- 23, molded plastic
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260
o
C/10s
- Weight: 0.008grams (approximately)
SYMBOL
UNIT
V
RRM
V
RWM
V
R
V
R(RMS)
V
I
F
mA
I
FSM
mA
P
D
mW
R
θJA
K/W
T
J
°C
T
STG
°C
SYMBOL
UNIT
V
(BR)
V
I
R
nA
C
J
pF
t
rr
ns
Notes: 1. Valid provided that terminals are kept at ambient temperature
2. Test period ＜ 3000 µs
Document Number: DS_S1404012
Version: E14
Reverse leakage current
PARAMETER
mV
PARAMETER
V
F
Forward voltage
BAS70 / -04 / -05 / -06
FEATURES
MECHANICAL DATA
Small Signal Product
Taiwan Semiconductor
SOT-23
VALUE
625
MAX
410
MIN
-
200
Reverse revovery time I
F
= I
R
= 10 mA, I
RR
= 100 Ω, I
RR
= 1 mA
Reverse breakdown voltage
I
R
= 10 µA
tp=300µs , I
F
=1.0mA
-
100.00
5
70 -
-
2Junction capacitance
V
R
= 0 V, f = 1 MHz
tp＜300µs , I
F
=15mA
tp＜300µs , V
R
=50V
225mW SMD Switching Diode
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (T
A
=25℃ unless otherwise noted)
1000-
-
Operating Junction Temperature
Thermal Resistance Junction to Ambient Air
Non-Repetitive Peak Forward Surge Current
Power Dissipation
Forward Continuous Current
@ t ≦ 1.0 s
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
(Note 1)
(Note 1)
Storage Temperature Range
70
100
-55 to + 125
-55 to + 150
V70
RMS Reverse Voltage 49
(Note 1)
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