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BC856A-7-F 其他数据使用手册 - Multicomp
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Multicomp
分类:
双极性晶体管
封装:
SOT-23
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BC856A-7-F数据手册
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BL Galaxy Electrical Production specification
PNP general purpose Transistor BC856/857/858
Document number: BL/SSSTC044 www.galaxycn.com
Rev.A 2
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage BC856
BC857
BC858
V
(BR)CBO
I
C
=-10μA,I
E
=0
-80
-50
-30
V
Collector-emitter breakdown voltage BC856
BC857
BC858
V
(BR)CEO
I
C
=-10mA,I
B
=0
-65
-45
-30
V
Emitter-base breakdown voltage V
(BR)EBO
I
E
=-1μA,I
C
=0 -5 V
Collector cut-off current I
CBO
V
CB
=-30V,I
E
=0 -1 -15 nA
Emitter cut-off current I
EBO
V
EB
=-5V,I
C
=0 -0.1 μA
DC current gain BC856A,857A,858A
BC856B,857B,858B
BC857C,858C
h
FE
V
CE
=-5V,I
C
=-2mA
125
220
420
250
475
800
Collector-emitter saturation voltage V
CE(sat)
I
C
=-100mA, I
B
=-5mA
I
C
=-10mA, I
B
=-0.5mA
-0.65
-0.3
V
Base-emitter saturation voltage V
BE(sat)
I
C
=-100mA, I
B
=-5mA -1.1 V
collector capacitance
C
c
V
CB
=-10V,I
E
=I
e
=0
f=1MHz
4.5 pF
Transition frequency f
T
V
CE
=-5V, I
C
= -10mA
f=100MHz
100 MHz
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
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