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BCW68HTA 产品手册 - Diodes（美台）
制造商:
Diodes（美台）
分类:
双极性晶体管
封装:
SOT-23-3
描述:
BCW68H 系列 PNP 0.8 A 45 V 表面贴装 硅 中等功率 晶体管 - SOT-23
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BCW68HTA数据手册
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1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PNP Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
–45 Vdc
Collector–Base Voltage V
CBO
–60 Vdc
Emitter–Base Voltage V
EBO
–5.0 Vdc
Collector Current — Continuous I
C
–800 mAdc
DEVICE MARKING
BCW68GLT1 = DH
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR-5 Board
(1)
T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance, Junction to Ambient R
θJA
556 °C/W
Total Device Dissipation
Alumina Substrate,
(2)
T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance, Junction to Ambient R
θJA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
–55 to +150 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (I
C
= –10 mAdc, I
B
= 0) V
(BR)CEO
–45 — — Vdc
Collector–Emitter Breakdown Voltage (I
C
= –10 µAdc, V
EB
= 0) V
(BR)CES
–60 — — Vdc
Emitter–Base Breakdown Voltage (I
E
= –10 µAdc, I
C
= 0) V
(BR)EBO
–5.0 — — Vdc
Collector Cutoff Current
(V
CE
= –45 Vdc, I
E
= 0)
(V
CE
= –45 Vdc, I
B
= 0, T
A
= 150°C)
I
CES
—
—
—
—
–20
–10
nAdc
µAdc
Emitter Cutoff Current (V
EB
= –4.0 Vdc, I
C
= 0) I
EBO
— — –20 nAdc
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
Thermal Clad is a trademark of the Bergquist Company
Order this document
by BCW68GLT1/D
SEMICONDUCTOR TECHNICAL DATA
1
2
3
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
Motorola, Inc. 1996
COLLECTOR
3
1
BASE
2
EMITTER
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