Datasheet 搜索 > 光电晶体管 > VISHAY（威世） > BPW85C 数据手册 > BPW85C 其他数据使用手册 1/6 页
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BPW85C 其他数据使用手册 - VISHAY（威世）
制造商:
VISHAY（威世）
分类:
光电晶体管
封装:
T-1
描述:
BPW85 系列光电晶体管Vishay Semiconductor BPW85 是一个硅 NPN 光电晶体管系列。 它们采用标准 3mm (T-1) 塑料封装，带透明透镜。 BPW85 光电晶体管对可见光和近红外辐射敏感。 BPW85 系列包括 BPW85、BPW85A、BPW85B 和 BPW85C，它们特别适用于电子控制和驱动电路应用中的检测器。 BPW85 光电晶体管的特征： 3mm (T-1) 封装 通孔安装 光敏性高 高辐射灵敏度 快速响应时间 半强度角：25° 工作温度：-40 至 +100 °C### 红外光电晶体管，Vishay Semiconductor
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BPW85C数据手册
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BPW85, BPW85A, BPW85B, BPW85C
www.vishay.com
Vishay Semiconductors
Rev. 2.1, 04-Aug-14
1
Document Number: 81531
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Silicon NPN Phototransistor
DESCRIPTION
BPW85 is a silicon NPN phototransistor with high radiant
sensitivity in clear, T-1 plastic package. It is sensitive to
visible and near infrared radiation.
FEATURES
• Package type: leaded
• Package form: T-1
• Dimensions (in mm): Ø 3
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Fast response times
• Angle of half sensitivity: ϕ = ± 25°
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Detector in electronic control and drive circuits
Note
• Test condition see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
20815
PRODUCT SUMMARY
COMPONENT I
ca
(mA) ϕ (deg) λ
0.1
(nm)
BPW85 0.8 to 8 ± 25 450 to 1080
BPW85A 0.8 to 2.5 ± 25 450 to 1080
BPW85B 1.5 to 4 ± 25 450 to 1080
BPW85C 3 to 8 ± 25 450 to 1080
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
BPW85 Bulk MOQ: 5000 pcs, 5000 pcs/bulk T-1
BPW85A Bulk MOQ: 5000 pcs, 5000 pcs/bulk T-1
BPW85B Bulk MOQ: 5000 pcs, 5000 pcs/bulk T-1
BPW85C Bulk MOQ: 5000 pcs, 5000 pcs/bulk T-1
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Collector emitter voltage V
CEO
70 V
Emitter collector voltage V
ECO
5V
Collector current I
C
50 mA
Collector peak current t
p
/T = 0.5, t
p
≤ 10 ms I
CM
100 mA
Power dissipation T
amb
≤ 55 °C P
V
100 mW
Junction temperature T
j
100 °C
Operating temperature range T
amb
-40 to +100 °C
Storage temperature range T
stg
-40 to +100 °C
Soldering temperature t ≤ 3 s, 2 mm from case T
sd
260 °C
Thermal resistance junction/ambient Connected with Cu wire Ø 0.14 mm
2
R
thJA
450 K/W
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