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BZD27C47P RVG 其他数据使用手册 - Taiwan Semiconductor（台湾半导体）
制造商:
Taiwan Semiconductor（台湾半导体）
封装:
Sub SMA
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BZD27C47P RVG数据手册
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BZD27C6V8P - BZD27C220P
Taiwan Semiconductor
1 Version:Z1706
1W, 6.8V - 220V Voltage Regulator Diode
FEATURES
● Silicon zener diodes
● Low profile surface-mount package
● Zener and surge current specification
● Low leakage current
● Excellent stability
● Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● Switching mode power supply (SMPS)
● Adapters
● Lighting application
● On-board DC/DC converter
MECHANICAL DATA
● Case: Sub SMA
● Molding compound meets UL 94 V-0 flammability rating
● Part no. with suffix "H" means AEC-Q101 qualified
● Packing code with suffix "G" means green compound
(halogen-free)
● Moisture sensitivity level: level 1, per J-STD-020
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 2 whisker test
● Polarity: As marked
● Weight: 19mg (approximately)
KEY PARAMETERS
PARAMETER
VALUE
UNIT
V
Z
6.8 - 220
V
P
tot
1.0
W
T
J MAX
175
°C
Package
Sub SMA
Configuration
Single die
Sub SMA
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Forward voltage @ I
F
=0.2A
V
F
1.2
Volts
Power dissipation at T
L
=73°C
T
A
=25°C (Note 1)
P
tot
2.3
Watts
1.0
Non-repetitive peak pulse power dissipation
100μs square pulse (Note 2)
P
ZSM
300
Watts
Non-repetitive peak pulse power dissipation
10/1000μs waveform (BZD27C6V8P to BZD27C100P)
P
RSM
150
Watts
Non-repetitive peak pulse power dissipation
10/1000μs waveform (BZD27C110P to BZD27C220P)
P
RSM
100
Watts
Operating and storage temperature range
T
J
,T
STG
-55 to +175
°C
Notes:
1. Mounted on Cu-Pad size 5mm x 5mm
2. T
J
=25°C prior to surge
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