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CC1310F128RHBR 其他数据使用手册 - TI（德州仪器）
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TI（德州仪器）
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RF模块、IC及配件
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VQFN-32
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CC1310F128RHBR 编带
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CC1310F128RHBR数据手册
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Texas Instruments Incorporated PCN# 20161019000
PCN Number:
20161019000
PCN Date:
Oct. 24,2016
Title:
Important enhancements for CC1310 family of devices and Datasheet Updates
Customer Contact:
PCN Manager
Dept:
Quality Services
Proposed 1
st
Ship Date:
Jan. 24, 2017
Estimated Sample
Availability:
Date provided at sample
request
Change Type:
Assembly Site
Design
Wafer Bump Site
Assembly Process
Data Sheet
Wafer Bump Material
Assembly Materials
Part number change
Wafer Bump Process
Mechanical Specification
Test Site
Wafer Fab Site
Packing/Shipping/Labeling
Test Process
Wafer Fab Materials
Wafer Fab Process
PCN Details
Description of Change:
With the introduction of CC1310 die Rev B Texas Instruments is announcing several important
enhancements increasing the versatility and usability of all CC1310 part numbers going forward.
This notification is to inform of minor design changes as well as software, tool chain and datasheet
updates to select devices. Affected devices are listed in the Product Affected section of this
document. The changes and updates are summarized as follows:
1) Removed limitation on usage of on-chip 32 kHz RC oscillator
On die Rev B the built in 32 kHz RC oscillator (RCOSC_LF) can be used as the system low
frequency oscillator to clock the RTC. The accuracy of the RTC when using this oscillator is
within +/- 500 ppm when calibrated 1x per second. For radio networks that have more relaxed
timing accuracy than the above, it is now possible to run the CC1310 die Rev B with only 1x
crystal on the PCB (24 MHz).
2) Removed limitation on frequency bands supported in CC1310
New frequency bands are supported for the CC1310 from die Rev B and onwards, starting with
support for frequency bands in the 430-510 MHz range. This will allow customers to use the
same device in a number of markets worldwide. Note that current die Rev A material will still be
limited to 863-930 MHz only. SmartRF Studio 2.4.3 or later will detect die Rev A devices and
issue an appropriate warning as to the applicable frequency range. Please remember to update
SmartRF Studio accordingly.
3) Removed limitation on Brown-out detector (BOD)
The brown-out detector (BOD) has been improved from die Rev A to die Rev B and the CC1310
datasheet restrictions regarding the BOD no longer apply. Restrictions do still apply for die Rev
A material. More details regarding this item is found in section 6.7 – Power management in the
CC1310 datasheet (SWRS181 update C, footnote 2).
4) ESD correction
The ESD HBM and ESD CDM levels are corrected to ±3000V and ±500V respectively in the
CC1310 datasheet. Note the following:
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard
ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a
standard ESD control process.
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