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器件3D模型￥ 0.029
CL05A225KP5NNNC 其他数据使用手册 - Samsung（三星）
制造商:
Samsung（三星）
分类:
电容
封装:
0402
描述:
贴片陶瓷电容 2.2uF ±10% 10V X5R 0402
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CL05A225KP5NNNC数据手册
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若手册格式错乱，请下载阅览PDF原文件
VESD05A5A-HSF
www.vishay.com
Vishay Semiconductors
Rev. 1.5, 16-Jul-15
1
Document Number: 81655
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5-Line ESD-Protection Diode Array in LLP75
MARKING (example only)
Dot = pin 1 marking
XX = date code
YY = type code (see table below)
FEATURES
• Ultra compact LLP75-6L package
• Low profile < 0.6 mm
• 5-line ESD-protection
• Low leakage current I
R
< 0.1 μA
• Low load capacitance C
D
= 13 pF
• ESD-protection acc. IEC 61000-4-2
± 15 kV contact discharge
± 15 kV air discharge
• Working voltage range V
RWM
= 5 V
• e4 - precious metal (e.g. Ag, Au, NiPd, NiPdAu) (no Sn)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
20453
1
19956
1
2
3
6
54
21001
XX
YY
ORDERING INFORMATION
DEVICE NAME ORDERING CODE
TAPED UNITS PER REEL
(8 mm TAPE ON 7" REEL)
MINIMUM ORDER QUANTITY
VESD05A5A-HSF VESD05A5A-HSF-GS08 3000 15 000
PACKAGE DATA
DEVICE NAME
PACKAGE
NAME
TYPE
CODE
WEIGHT
MOLDING COMPOUND
FLAMMABILITY RATING
MOISTURE
SENSITIVITY LEVEL
SOLDERING
CONDITIONS
VESD05A5A-HSF LLP75-6L AR 4.2 mg UL 94 V-0
MSL level 1
(according J-STD-020)
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS VESD05A5A-HSF
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Peak pulse current
BiAs-mode: each input (pin 1 to pin 6) to ground (pin 2);
acc. IEC 61000-4-5; t
p
= 8/20 μs; single shot
I
PPM
2.5 A
BiSy-mode: each input (pin 1 to pin 6) to any other input pin.
Pin 2 not connected. Acc. IEC 61000-4-5; t
p
= 8/20 μs; single shot
2.5 A
Peak pulse power
BiAs-mode: each input (pin 1 to pin 6) to ground (pin 2);
acc. IEC 61000-4-5; t
p
= 8/20 μs; single shot
P
PP
33 W
BiSy-mode: each input (pin 1 - pin 6) to any other input pin.
Pin 2 not connected. Acc. IEC 61000-4-5; t
p
= 8/20 μs; single shot
43 W
ESD immunity
acc. IEC61000-4-2; 10 pulses
BiAs-mode: each input (pin 1 to pin 6) to ground (pin 2)
Contact
discharge
V
ESD
± 15 kV
Air
discharge
± 15 kV
ESD immunity
acc. IEC 61000-4-2 ; 10 pulses
BiSy-mode: each input (pin 1 to pin 6) to any other input pin.
Pin 2 not connected.
Contact
discharge
V
ESD
± 10 kV
Air
discharge
± 10 kV
Operating temperature Junction temperature T
J
-40 to +125 °C
Storage temperature T
STG
-55 to +150 °C
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