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CPC9909DB 其他数据使用手册 - IXYS Semiconductor
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CPC9909DB数据手册
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INTEGRATED CIRCUITS DIVISION
CPC9909
R03 www.ixysic.com 5
1.4 Recommended Operating Conditions
1.5 Electrical Characteristics
Unless otherwise specified, all electrical specifications are provided for T
A
=25C.
1.6 Thermal Characteristics
1
Use of a four-layer PCB can improve thermal dissipation (reference EIA/JEDEC JESD51-5).
Parameter Symbol Minimum Typical Maximum Unit
Input Voltage Range
V
IN
12 - 550
V
DC
PWMD Frequency
f
PWMD
- 500 - Hz
Operating Temperature
T
A
-40 - +85 °C
Parameter Conditions Symbol Minimum Typical Maximum Unit
Input
Input Voltage Range DC Input Voltage
V
IN
8 - 550
V
DC
Shut-Down Mode Supply Current
V
IN
=8 to 550V, PWMD to GND
I
IN
-0.30.6mA
Regulator
Voltage Regulator Output
V
IN
=15V to 550V, I
DD
=0, I
GATE
=0 V
DD
7.2 7.8 8.4
V
DC
V
DD
Current Available
for External Circuitry
-
I
DD
--2mA
V
DD
Load Regulation V
IN
=15V, I
DD
=1mA V
DD
- 150 200 mV
PWM Dimming
PWMD Input Low Voltage
V
IN
=8V to 550V V
PWMD(low)
--0.5
V
PWMD Input High Voltage
V
IN
=8V to 550V V
PWMD(high)
2.4 - -
PWMD Pull-Down Resistance -
R
PWMD
80 115 150 k
Current Sense Comparator
Current Sense Input Current
Input Low CS=0V
I
IL
-5 - 5
A
Input High
CS=V
DD
I
IH
-5 0 5
Current Sense Threshold Voltage
-40°C <
T
A
< 85°C, V
IN
=15V to 550V
V
CS(high)
200 250 300
mV
-55°C <
T
A
< -40°C, V
IN
=15V to 550V
180 - 300
Current Sense Blanking Interval
R
T
=400k t
BLANK
- 400 - ns
Delay from CS Trip to Gate Low
R
T
=400k t
DELAY
- 300 - ns
Minimum Off-Time One-Shot
Minimum Off-Time
R
T
=400k t
off
6-8s
Gate Driver
Gate High Output Voltage
I
OUT
=-10mA V
GATE(high)
V
DD
-0.3 V
DD
-0.06
-
V
Gate Low Output Voltage
I
OUT
=+10mA V
GATE(low)
- 0.03 0.3
Gate Output Rise Time
C
GATE
=500pF
t
RISE
-16-
ns
Gate Output Fall Time
C
GATE
=500pF
t
FAL L
-7-
Parameter Package Symbol Minimum Typical Maximum Unit
Thermal Resistance,
Junction-to-Ambient
SOIC-8 With Thermal Pad (NE)
1
R
JA
-50-
°C/W
SOIC-8 W/O Thermal Pad (N) - 128 -
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