Datasheet 搜索 > MOS管 > TI（德州仪器） > CSD17571Q2 数据手册 > CSD17571Q2 其他数据使用手册 1/8 页
￥ 0.748
CSD17571Q2 其他数据使用手册 - TI（德州仪器）
制造商:
TI（德州仪器）
分类:
MOS管
封装:
WSON-FET-6
描述:
30V N 通道 NexFET 功率 MOSFET，CSD175712Q
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
导航目录
CSD17571Q2数据手册
Page:
of 8 Go
若手册格式错乱，请下载阅览PDF原文件
CSD16404Q5A
N-Channel
CICLON NexFET™ Power MOSFETs
© 2008 CICLON Semiconductor Device Corp., rev 2.7 www.ciclonsemi.com
All rights reserved.
Type Package Package Media Qty Ship
CSD16404Q5A QFN 5X6 Plastic Package 13 inch reel 2500 Tape and Reel
V
DS
25 V
Q
g
6.5 nC
Q
gd
1.7 nC
V
GS
=4.5V 5.7
mΩ
R
DS(on)
V
GS
=10V 4.1
mΩ
V
th
1.8 V
Maximum Values
(T
A
=25
o
C unless otherwise stated)
Symbol Parameter Value Units
V
DS
Drain to Source Voltage 25 V
V
GS
Gate to Source Voltage +16 / -12 V
Continuous Drain Current, T
C
= 25°C
81
A
I
D
Continuous Drain Current
1
21 A
I
DM
Pulsed Drain Current, T
A
= 25°C
2
135 A
P
D
Power Dissipation
1
3.0 W
T
J
, T
STG
Operating Junction and Storage Temperature Range
-55 to 150 °C
E
AS
Avalanche Energy, single pulse I
D
=40A, L = 0.1mH, R
G
= 25Ω
80 mJ
1. R
θ
ja = 41
0
C/W on 1in
2
Cu (2 oz.) on 0.060” thick FR4 PCB.
2. Pulse width ≤300 µs, duty cycle ≤ 2%
Features
• Ultra Low Qg & Qgd
• Low Thermal Resistance
• Avalanche Rated
• Pb Free Terminal Plating
• RoHS Compliant
• Halogen Free
R
DS(ON)
vs. V
GS
Gate Charge
0
2
4
6
8
10
12
14
16
18
20
024681012
V
GS
- Gate to Source Voltage (V)
R
DS(on)
- On Resistance (m
Ω
)
I
D
= 20A
T
C
= 125ºC
T
C
= 25º C
0
2
4
6
8
10
12
03691215
Qg - Gate Charge (nC)
Gate Voltage (V)
V
DS
= 12.5V
I
D
= 20A
QFN 5mm x 6mm Plastic Package
Ordering Information
Top View
S
S
G
D
D
D
D
S
5
6
7
8
4
3
2
1
G
S
S
S
D
D
D
D
D
5
6
7
8
4
3
2
1
G
S
S
S
D
D
D
D
D
Product Summary
器件 Datasheet 文档搜索
AiEMA 数据库涵盖高达 72,405,303 个元件的数据手册，每天更新 5,000 多个 PDF 文件
