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CSD17578Q3A 其他数据使用手册 - TI（德州仪器）
制造商:
TI（德州仪器）
分类:
MOS管
封装:
VSONP-8
描述:
CSD17578Q3A 30 V N 通道 NexFET™ 功率 MOSFET
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CSD17578Q3A数据手册
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若手册格式错乱，请下载阅览PDF原文件
V
GS
- Gate-to-Source Voltage (V)
R
DS(on)
- On-State Resistance (m:)
0 2 4 6 8 10 12 14 16 18 20
0
2
4
6
8
10
12
14
16
18
20
D007
T
C
= 25°C, I
D
= 10 A
T
C
= 125°C, I
D
= 10 A
Q
g
- Gate Charge (nC)
V
GS
- Gate-to-Source Voltage (V)
0 2 4 6 8 10 12 14 16 18
0
1
2
3
4
5
6
7
8
9
10
D004
I
D
= 10 A, V
DS
= 15V
1
D
2
D
3
D
4
D
D
5
G
6S
7
S
8S
P0093-01
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CSD17578Q3A
SLPS525A –SEPTEMBER 2014–REVISED JANUARY 2016
CSD17578Q3A 30 V N-Channel NexFET™ Power MOSFETs
1 Features
Product Summary
1
• Low Q
g
and Q
gd
T
A
= 25°C TYPICAL VALUE UNIT
• Low R
DS(on)
V
DS
Drain-to-Source Voltage 30 V
• Low Thermal Resistance
Q
g
Gate Charge Total (4.5 V) 7.9 nC
Q
gd
Gate Charge Gate to Drain 1.7 nC
• Avalanche Rated
V
GS
= 4.5 V 8.2 mΩ
• Pb-Free
R
DS(on)
Drain-to-Source On-Resistance
V
GS
= 10 V 6.3 mΩ
• RoHS Compliant
V
GS(th)
Threshold Voltage 1.5 V
• Halogen Free
• SON 3.3 mm × 3.3 mm Plastic Package
.
Ordering Information
(1)
2 Applications
DEVICE MEDIA QTY PACKAGE SHIP
CSD17578Q3A 13-Inch Reel 2500
• Point-of-Load Synchronous Buck Converter for
SON 3.3 x 3.3 mm Tape and
Plastic Package Reel
CSD17578Q3AT 7-Inch Reel 250
Applications in Networking, Telecom, and
Computing Systems
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
• Optimized for Control FET Applications
Absolute Maximum Ratings
3 Description
T
A
= 25°C VALUE UNIT
This 30 V, 6.3 mΩ, SON 3.3 mm × 3.3 mm
V
DS
Drain-to-Source Voltage 30 V
NexFET™ power MOSFET is designed to minimize
V
GS
Gate-to-Source Voltage ±20 V
losses in power conversion applications.
Continuous Drain Current (Package limited) 20
Top View
Continuous Drain Current (Silicon limited),
I
D
54 A
T
C
= 25°C
Continuous Drain Current
(1)
14
I
DM
Pulsed Drain Current
(2)
142 A
Power Dissipation
(1)
2.5
P
D
W
Power Dissipation, T
C
= 25°C 37
T
J
, Operating Junction Temperature,
–55 to 150 °C
T
stg
Storage Temperature
Avalanche Energy, single pulse
E
AS
24 mJ
I
D
= 22 A, L = 0.1 mH, R
G
= 25 Ω
(1) Typical R
θJA
= 50°C/W on a 1 inch
2
, 2 oz. Cu pad on a
.
0.06 inch thick FR4 PCB.
.
(2) Max R
θJC
= 4.2 °C/W, pulse duration ≤100 μs, duty cycle ≤1%
R
DS(on)
vs V
GS
Gate Charge
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
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