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CSD18504Q5AT 其他数据使用手册 - TI（德州仪器）
制造商:
TI（德州仪器）
分类:
MOS管
封装:
VSON-8
描述:
40V、N 沟道 NexFET MOSFET™、单路、SON5x6、6.6mΩ 8-VSONP -55 to 150
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CSD18504Q5AT数据手册
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0
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6
8
10
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18
20
0 2 4 6 8 10 12 14 16 18 20
V
GS
- Gate-to- Source Voltage (V)
R
DS(on)
- On-State Resistance (mΩ)
T
C
= 25°C Id = 17A
T
C
= 125ºC Id = 17A
G001
0
1
2
3
4
5
6
7
8
9
10
0 2 4 6 8 10 12 14 16
Q
g
- Gate Charge (nC)
V
GS
- Gate-to-Source Voltage (V)
I
D
= 17A
V
DS
= 20V
G001
1
D
2
D
3
D
4
D
D
5
G
6S
7
S
8S
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CSD18504Q5A
SLPS366E –JUNE 2012–REVISED SEPTEMBER 2014
CSD18504Q5A 40-V N-Channel NexFET™ Power MOSFET
1 Features
Product Summary
1
• Ultra-Low Q
g
and Q
gd
T
A
= 25°C TYPICAL VALUE UNIT
• Low Thermal Resistance
V
DS
Drain-to-Source Voltage 40 V
• Avalanche Rated
Q
g
Gate Charge Total (4.5 V) 7.7 nC
Q
gd
Gate Charge Gate-to-Drain 2.4 nC
• Logic Level
V
GS
= 4.5 V 7.5 mΩ
• Pb Free Terminal Plating
R
DS(on)
Drain-to-Source On-Resistance
V
GS
= 10 V 5.3 mΩ
• RoHS Compliant
V
GS(th)
Threshold Voltage 1.9 V
• Halogen Free
• SON 5 mm × 6 mm Plastic Package
Ordering Information
(1)
Device Qty Media Package Ship
2 Applications
CSD18504Q5A 2500 13-Inch Reel
SON 5 mm × 6 mm Tape and
Plastic Package Reel
• DC-DC Conversion
CSD18504Q5AT 250 7-Inch Reel
• Secondary Side Synchronous Rectifier
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
• Battery Motor Control
Absolute Maximum Ratings
3 Description
T
A
= 25°C VALUE UNIT
This 5.3 mΩ, SON 5 × 6 mm, 40 V NexFET™ power
V
DS
Drain-to-Source Voltage 40 V
MOSFET is designed to minimize losses in power
V
GS
Gate-to-Source Voltage ±20 V
conversion applications.
Continuous Drain Current (Package limited) 50
Continuous Drain Current (Silicon limited),
Top View
I
D
75 A
T
C
= 25°C
Continuous Drain Current
(1)
15
I
DM
Pulsed Drain Current
(2)
275 A
Power Dissipation
(1)
3.1
P
D
W
Power Dissipation, T
C
= 25°C 77
T
J
, Operating Junction and
–55 to 150 °C
T
stg
Storage Temperature Range
Avalanche Energy, single pulse
E
AS
92 mJ
I
D
= 43 A, L = 0.1 mH, R
G
= 25 Ω
(1) Typical R
θJA
= 40°C/W on a 1-inch
2
, 2-oz. Cu pad on a
0.06-inch thick FR4 PCB.
(2) Max R
θJC
= 2.0 °C/W, pulse duration ≤100 μs, duty cycle
≤1%
R
DS(on)
vs V
GS
Gate Charge
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
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