Datasheet 搜索 > MOS管 > TI（德州仪器） > CSD19505KCS 数据手册 > CSD19505KCS 其他数据使用手册 1/13 页
器件3D模型￥ 11.437
CSD19505KCS 其他数据使用手册 - TI（德州仪器）
制造商:
TI（德州仪器）
分类:
MOS管
封装:
TO-220-3
描述:
80V、N 通道 NexFET(TM) 功率 MOSFET，CSD19505KCS
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
导航目录
CSD19505KCS数据手册
Page:
of 13 Go
若手册格式错乱，请下载阅览PDF原文件
0
1
2
3
4
5
6
7
8
9
10
0 2 4 6 8 10 12 14 16 18 20
V
GS
- Gate-to- Source Voltage (V)
R
DS(on)
- On-State Resistance (mΩ)
T
C
= 25°C, I
D
= 100A
T
C
= 125°C, I
D
= 100A
G001
0
1
2
3
4
5
6
7
8
9
10
0 10 20 30 40 50 60 70 80
Q
g
- Gate Charge (nC)
V
GS
- Gate-to-Source Voltage (V)
I
D
= 100A
V
DS
= 40V
G001
Gate
(Pin 1)
Drain (Pin 2)
Source (Pin 3)
Product
Folder
Sample &
Buy
Technical
Documents
Tools &
Software
Support &
Community
CSD19505KCS
SLPS480B –JANUARY 2014–REVISED OCTOBER 2014
CSD19505KCS 80 V N-Channel NexFET™ Power MOSFET
1 Features
Product Summary
1
• Ultra-Low Q
g
and Q
gd
T
A
= 25°C TYPICAL VALUE UNIT
• Low Thermal Resistance
V
DS
Drain-to-Source Voltage 80 V
• Avalanche Rated
Q
g
Gate Charge Total (10 V) 76 nC
Q
gd
Gate Charge Gate to Drain 11 nC
• Pb-Free Terminal Plating
V
GS
= 6 V 2.9 mΩ
• RoHS Compliant
R
DS(on)
Drain-to-Source On-Resistance
V
GS
= 10 V 2.6 mΩ
• Halogen Free
V
GS(th)
Threshold Voltage 2.6 V
• TO-220 Plastic Package
Ordering Information
(1)
2 Applications
Device Package Media Qty Ship
• Secondary Side Synchronous Rectifier
CSD19505KCS TO-220 Plastic Package Tube 50 Tube
• Motor Control
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
3 Description
Absolute Maximum Ratings
This 80 V, 2.6 mΩ, TO-220 NexFET™ power
MOSFET is designed to minimize losses in power
T
A
= 25°C VALUE UNIT
conversion applications.
V
DS
Drain-to-Source Voltage 80 V
V
GS
Gate-to-Source Voltage ±20 V
Continuous Drain Current (Package limited) 150
Continuous Drain Current (Silicon limited),
208
I
D
T
C
= 25°C A
Continuous Drain Current (Silicon limited),
147
T
C
= 100°C
I
DM
Pulsed Drain Current
(1)
400 A
P
D
Power Dissipation 300 W
T
J
, Operating Junction and
–55 to 175 °C
T
stg
Storage Temperature Range
Avalanche Energy, single pulse
E
AS
510 mJ
I
D
= 101 A, L = 0.1 mH, R
G
= 25 Ω
.
(1) Max R
θJC
= 0.5°C/W, pulse duration ≤100 μs, duty cycle ≤1%
.
.
R
DS(on)
vs V
GS
Gate Charge
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
器件 Datasheet 文档搜索
AiEMA 数据库涵盖高达 72,405,303 个元件的数据手册，每天更新 5,000 多个 PDF 文件
