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CSD19534KCS 其他数据使用手册 - TI（德州仪器）
制造商:
TI（德州仪器）
分类:
MOS管
封装:
TO-220-3
描述:
CSD19534KCS 100V N 通道 NexFET™ 功率 MOSFET
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CSD19534KCS数据手册
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V
GS
- Gate-to-Source Voltage (V)
R
DS(on)
- On-State Resistance (m:)
2 4 6 8 10 12 14 16 18 20
0
5
10
15
20
25
30
35
40
45
D007
T
C
= 25° C, I
D
= 30 A
T
C
= 125° C, I
D
= 30 A
Q
g
- Gate Charge (nC)
V
GS
- Gate-to-Source Voltage (V)
0 2 4 6 8 10 12 14 16 18
0
2
4
6
8
10
D004
I
D
= 30 A
V
DS
= 50 V
Gate
(Pin 1)
Drain (Pin 2)
Source (Pin 3)
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CSD19534KCS
SLPS530 –JANUARY 2015
CSD19534KCS 100 V N-Channel NexFET™ Power MOSFET
1 Features
Product Summary
1
• Ultra-Low Q
g
and Q
gd
T
A
= 25°C TYPICAL VALUE UNIT
• Low Thermal Resistance
V
DS
Drain-to-Source Voltage 100 V
• Avalanche Rated
Q
g
Gate Charge Total (10 V) 16.4 nC
Q
gd
Gate Charge Gate-to-Drain 3.3 nC
• Pb-Free Terminal Plating
V
GS
= 6 V 16.3 mΩ
• RoHS Compliant
R
DS(on)
Drain-to-Source On-Resistance
V
GS
= 10 V 13.7 mΩ
• Halogen Free
V
GS(th)
Threshold Voltage 2.8 V
• TO-220 Plastic Package
Ordering Information
(1)
2 Applications
Device Package Media Qty Ship
• Secondary Side Synchronous Rectifier
CSD19534KCS TO-220 Plastic Package Tube 50 Tube
• Motor Control
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
3 Description
Absolute Maximum Ratings
This 100 V, 13.7 mΩ, TO-220 NexFET™ power
MOSFET is designed to minimize losses in power
T
A
= 25°C VALUE UNIT
conversion applications.
V
DS
Drain-to-Source Voltage 100 V
V
GS
Gate-to-Source Voltage ±20 V
SPACE
Continuous Drain Current (Package limited) 100
Continuous Drain Current (Silicon limited),
54
I
D
T
C
= 25°C A
Continuous Drain Current (Silicon limited),
38
T
C
= 100°C
I
DM
Pulsed Drain Current
(1)
138 A
P
D
Power Dissipation 118 W
T
J
, Operating Junction and
–55 to 175 °C
T
stg
Storage Temperature Range
Avalanche Energy, single pulse
E
AS
54 mJ
I
D
= 33 A, L = 0.1 mH, R
G
= 25 Ω
(1) Max R
θJC
= 1.3°C/W, pulse duration ≤100 μs, duty cycle ≤1%
.
R
DS(on)
vs V
GS
Gate Charge
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
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