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CSD23203WT 其他数据使用手册 - TI（德州仪器）
制造商:
TI（德州仪器）
分类:
MOS管
封装:
DSBGA-6
描述:
TEXAS INSTRUMENTS CSD23203WT 晶体管, MOSFET, P沟道, -3 A, -8 V, 0.0162 ohm, -4.5 V, -800 mV
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CSD23203WT数据手册
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若手册格式错乱，请下载阅览PDF原文件
Texas Instruments, Inc. PCN#20160610005A
PCN Number:
20160610005A
PCN Date:
Sept. 14, 2016
Title:
Qualify 2mm pitch Carrier Tape for select DSBGA and uSIP Devices
Customer Contact:
PCN Manager
Dept:
Quality Services
Change Type:
Assembly Site
Design
Wafer Bump Site
Assembly Process
Data Sheet
Wafer Bump Material
Assembly Materials
Part number change
Wafer Bump Process
Mechanical Specification
Test Site
Wafer Fab Site
Packing/Shipping/Labeling
Test Process
Wafer Fab Materials
Wafer Fab Process
PCN Details
Description of Change:
Revision A is to update the description of change to provide additional information on the 2mm
carrier pitch packing method differentiating this from the 4mm pitch carrier tape. We apologize for
any inconvenience this may have caused.
Texas Instruments is pleased to announce the qualification of 2mm pitch carrier tape for select
DSBGA and uSIP Devices. These devices are currently shipped in 4mm pitch carrier tape. Carrier
tape design summary as follows:
Current Design:
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