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CSD25481F4T 产品修订记录 - TI（德州仪器）
制造商:
TI（德州仪器）
分类:
MOS管
封装:
PICOSTAR-3
描述:
TEXAS INSTRUMENTS CSD25481F4T 晶体管, MOSFET, P沟道, -2.5 A, -20 V, 0.075 ohm, -8 V, -950 mV
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封装尺寸在P5
功能描述在P4
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CSD25481F4T数据手册
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Texas Instruments, Inc. PCN#20160610005
PCN Number:
20160610005
PCN Date:
06/22/2016
Title:
Qualify 2mm pitch Carrier Tape for select DSBGA and uSIP Devices
Customer Contact:
PCN Manager
Dept:
Quality Services
Proposed 1
st
Ship Date:
09/22/2016
Estimated Sample
Availability:
Date provided at
sample request
Change Type:
Assembly Site
Design
Wafer Bump Site
Assembly Process
Data Sheet
Wafer Bump Material
Assembly Materials
Part number change
Wafer Bump Process
Mechanical Specification
Test Site
Wafer Fab Site
Packing/Shipping/Labeling
Test Process
Wafer Fab Materials
Wafer Fab Process
PCN Details
Description of Change:
Texas Instruments is pleased to announce the qualification of 2mm pitch carrier tape for select
DSBGA and uSIP Devices. These devices are currently shipped in 4mm pitch carrier tape. Carrier
tape design summary as follows:
Current Design:
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