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CUS10S30,H3F(B 其他数据使用手册 - Toshiba（东芝）
制造商:
Toshiba（东芝）
分类:
肖特基二极管
封装:
USC
描述:
整流二极管/整流桥 CUS10S30,H3F(B SOD-323
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CUS10S30,H3F(B数据手册
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CUS10S30
1
Schottky Barrier Diode Silicon Epitaxial
CUS10S30
CUS10S30
CUS10S30
CUS10S30
Start of commercial production
2013-09
1.
1.
1.
1. Applications
Applications
Applications
Applications
• High-Speed Switching
2.
2.
2.
2. Packaging and Internal Circuit
Packaging and Internal Circuit
Packaging and Internal Circuit
Packaging and Internal Circuit
USC
1: Cathode
2: Anode
3.
3.
3.
3. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Peak reverse voltage
Reverse voltage
Average rectified current
Non-repetitive peak forward surge current
Junction temperature
Storage temperature
Symbol
V
RM
V
R
I
O
I
FSM
T
j
T
stg
Note
(Note 1)
(Note 2)
Rating
30
20
1.0
5
125
-55 to 125
Unit
V
A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm
2
)
Note 2: Measured with a 10 ms pulse.
2014-04-07
Rev.2.0
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