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DPG30C200PC 其他数据使用手册 - IXYS Semiconductor
制造商:
IXYS Semiconductor
分类:
二极管阵列
封装:
TO-263-3
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
DPG30C200PC数据手册
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of 4 Go
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DPG 30 C 200 PC
ns
HiPerFRED²
Symbol Definition
R a t i n g s
Features / Advantages:
typ. max.
I
FSM
I
R
A
V
240
I A
V
F
1.26
R 1.70 K/W
V
R
=
2 1 3
min.
15
t = 10 ms
Applications:
V
RRM
V200
1T
VJ
V°C=
T
VJ
°C=mA0.08
Package:
Part number
V
R
=
T
VJ
=°C
I
F
=A
V
T
C
= 140°C
d =
P
tot
90 WT
C
°C=
T
VJ
175 °C-55
V
I
RRM
=
=
200
15
15
T
VJ
= 45°C
DPG 30 C 200 PC
V
A
200
V200
25
25
25
max. repetitive reverse voltage
reverse current
forward voltage
virtual junction temperature
total power dissipation
max. forward surge current
Conditions
Unit
1.51
T
VJ
°C=25
C
J
j
unction capacitance
V = V; T
150
V
F0
V0.69T
VJ
= 175°C
r
F
18
f = 1 MHz = °C25
mΩ
V1.01T
VJ
=°C
I
F
=A
V
15
1.29
I
F
=A30
I
F
=A30
2x
threshold voltage
slope resistance
for power loss calculation only
Backside: cathode
3A
T
VJ
=°C
reverse recovery time
A6.5
35
55
ns
(50 Hz), sine
t
rr
= 35 ns
● Housing:
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Common Cathode
TO-263 (D2Pak)
●rIndustry standard outline
●rEpoxy meets UL 94V-0
●rRoHS compliant
R
VJ
I
RM
max. reverse recovery current
I
F
=A;15
25
T=125°C
VJ
-di
F
=A/µs130/dtt
rr
V
R
=V130
T
VJ
=°C25
T=125°C
VJ
µA
20150 pF
thermal resistance junction to case
thJC
rectangular 0.5
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
FAV
average forward current
FAV
150
IXYS reserves the right to change limits, conditions and dimensions.
©
20100222a
Data according to IEC 60747and per diode unless otherwise specified
2010 IXYS all rights reserved
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